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SVF7N60CF

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Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SVF7N60CF

Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3

SVF7N60CF from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET, with gate-source voltage VGS rated at ±30 V in the absolute maximum ratings.
2 Drain passive Drain of the N-channel MOSFET, with drain-source voltage rated at 600 V and continuous drain current ID rated at 7.0 A at TC=25°C.
3 Source passive Source of the N-channel MOSFET, with continuous source current IS (integral body diode) rated at 7.0 A.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=600V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VGS= VDS, ID=250µA 2
Static Drain-Source On State Resistance RDS(on) 0.96 1.2 Ω VGS=10V, ID=3.5A 2
Input Capacitance Ciss 592 770 1001 pF VDS=25V, VGS=0V, f=1.0MHZ 2
Drain-Source Voltage VDS 600 V 2
Gate-Source Voltage VGS -30 30 V 2
Drain Current ID 7 A TC=25C 2
Drain Current ID 4 A TC=100C 2
Drain Current Pulsed IDM 28 A 2
Power Dissipation PD 45 W TC=25C 2
Single Pulsed Avalanche Energy EAS 490 mJ Note 1: L=30mH, IAS=5.16A, VDD=100V, RG=25, starting TJ=25C 2
Operation Junction Temperature Range TJ -55 150 C 2
Storage Temperature Range Tstg -55 150 C 2
Thermal Resistance, Junction-to-Case RθJC 2.78 C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 2
Continuous Source Current IS 7 A Integral Reverse P-N Junction Diode in the MOSFET 3
Pulsed Source Current ISM 28 A 3
Diode Forward Voltage VSD 1.4 V IS=7.0A, VGS=0V 3

CAD (KiCad official)

  • Symbol: SVF7N60CF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (11 pp, sha256 d42a7fb93f7de1d0, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF