component
SVF7N60CF
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSVF7N60CF
Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3
SVF7N60CF from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, with gate-source voltage VGS rated at ±30 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain of the N-channel MOSFET, with drain-source voltage rated at 600 V and continuous drain current ID rated at 7.0 A at TC=25°C. |
| 3 | Source | passive | Source of the N-channel MOSFET, with continuous source current IS (integral body diode) rated at 7.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS= VDS, ID=250µA | 2 | |
| Static Drain-Source On State Resistance | RDS(on) | 0.96 | 1.2 | Ω | VGS=10V, ID=3.5A | 2 | |
| Input Capacitance | Ciss | 592 | 770 | 1001 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 |
| Drain-Source Voltage | VDS | 600 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Drain Current | ID | 7 | A | TC=25C | 2 | ||
| Drain Current | ID | 4 | A | TC=100C | 2 | ||
| Drain Current Pulsed | IDM | 28 | A | 2 | |||
| Power Dissipation | PD | 45 | W | TC=25C | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 490 | mJ | Note 1: L=30mH, IAS=5.16A, VDD=100V, RG=25, starting TJ=25C | 2 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.78 | C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | 2 | |||
| Continuous Source Current | IS | 7 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 28 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=7.0A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SVF7N60CF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (11 pp, sha256
d42a7fb93f7de1d0, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).