# SVF6N60D

**Hangzhou Silan Microelectronics** · MOSFETs · TO-252-2(DPAK)

SVF6N60D from Hangzhou Silan Microelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal, rated 600 V drain-source with 6 A continuous drain current at TC=25°C; it is also the mounting tab on the TO-252 package. |
| 3 | Source | passive | Source terminal; the integral body diode is rated 6 A continuous and 24 A pulsed source current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=600V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VGS= VDS, ID=250µA | 2 |
| Static Drain-Source On State Resistance | RDS(on) |  | 1.35 | 1.5 | Ω | VGS=10V, ID=3A | 2 |
| Continuous Source Current | IS |  |  | 6 | A | Integral reverse P-N junction diode in the MOSFET | 3 |
| Pulsed Source Current | ISM |  |  | 24 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=6A, VGS=0V | 3 |
| Drain-Source Voltage | VDS |  |  | 600 | V |  | 2 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain Current | ID |  |  | 6 | A | TC=25C | 2 |
| Drain Current | ID |  |  | 3.8 | A | TC=100C | 2 |
| Drain Current Pulsed | IDM |  |  | 24 | A |  | 2 |
| Power Dissipation | PD |  |  | 125 | W | TC=25C | 2 |
| Power Dissipation derating above 25C | PD |  |  | 1 | W/°C | Derate above 25C | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 343 | mJ | L=30mH, IAS=4.40A, VDD=105V, RG=25 (Note 1) | 2 |
| Operation Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 1 |  | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SVF6N60D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `svf6n60d-etched.step` / `svf6n60d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `svf6n60d.step` / `svf6n60d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8565532453289672705) (10 pp, sha256 `65ab3be5973f039d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/svf6n60d-datasheet.pdf)