component
SVF6N60D
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| svf6n60d-etched.glb | 17d ago |
| svf6n60d-etched.step | 17d ago |
| svf6n60d-hero.glb | 17d ago |
| svf6n60d-hero.overlay.json | 17d ago |
| svf6n60d.glb | 17d ago |
| svf6n60d.kicad_mod | 17d ago |
| svf6n60d.kicad_sym | 17d ago |
| svf6n60d.lbr | 17d ago |
| svf6n60d.step | 17d ago |
SVF6N60D
Hangzhou Silan Microelectronics · MOSFETs · TO-252-2(DPAK)
SVF6N60D from Hangzhou Silan Microelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal, rated 600 V drain-source with 6 A continuous drain current at TC=25°C; it is also the mounting tab on the TO-252 package. |
| 3 | Source | passive | Source terminal; the integral body diode is rated 6 A continuous and 24 A pulsed source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS= VDS, ID=250µA | 2 | |
| Static Drain-Source On State Resistance | RDS(on) | 1.35 | 1.5 | Ω | VGS=10V, ID=3A | 2 | |
| Continuous Source Current | IS | 6 | A | Integral reverse P-N junction diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 24 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=6A, VGS=0V | 3 | ||
| Drain-Source Voltage | VDS | 600 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Drain Current | ID | 6 | A | TC=25C | 2 | ||
| Drain Current | ID | 3.8 | A | TC=100C | 2 | ||
| Drain Current Pulsed | IDM | 24 | A | 2 | |||
| Power Dissipation | PD | 125 | W | TC=25C | 2 | ||
| Power Dissipation derating above 25C | PD | 1 | W/°C | Derate above 25C | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 343 | mJ | L=30mH, IAS=4.40A, VDD=105V, RG=25 (Note 1) | 2 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SVF6N60D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
svf6n60d-etched.step/svf6n60d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svf6n60d.step/svf6n60d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256
65ab3be5973f039d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).