# SVDZ24NT

**Hangzhou Silan Microelectronics** · MOSFETs · TO-220

SVDZ24NT from Hangzhou Silan Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; the gate-source voltage is rated ±20 V and the gate threshold voltage VGS(th) is 2.0 V to 4.0 V at ID=250 µA. |
| 2 | Drain | passive | Drain terminal; the drain-source breakdown voltage BVDSS is 55 V minimum and the continuous drain current is 17 A at TC=25°C (12 A at TC=100°C). |
| 3 | Source | passive | Source terminal; the continuous source (body diode) current IS is rated 17 A and the pulsed source current ISM is rated 68 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 55 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | 17 | A | TC=25°C | 1 |
| Drain Current | ID |  |  | 12 | A | TC=100°C | 1 |
| Drain Current Pulsed | IDM |  |  | 68 | A |  | 1 |
| Power Dissipation | PD |  |  | 45 | W | TC=25°C | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 122 | mJ | Note 1: L=1mH, IAS=13A, VDD=25V, RG=25Ω, starting TJ=25°C | 1 |
| Operation Junction Temperature Range | TJ | -55 |  | 175 | °C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 2.78 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62.5 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 55 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 20 | µA | VDS=55V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VGS=VDS, ID=250µA | 2 |
| Static Drain-Source On State Resistance | RDS(on) |  | 45 | 70 | mΩ | VGS=10V, ID=10A | 2 |
| Continuous Source Current | IS |  |  | 17 | A | Integral Reverse P-N Junction Diode in the MOSFET | 2 |
| Pulsed Source Current | ISM |  |  | 68 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | IS=10A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `SVDZ24NT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `svdz24nt-etched.step` / `svdz24nt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `svdz24nt.step` / `svdz24nt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897172918587392) (7 pp, sha256 `bc64dc571ed05d1d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/svdz24nt-datasheet.pdf)