component
SVDZ24NT
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| svdz24nt-etched.glb | 8d ago |
| svdz24nt-etched.step | 8d ago |
| svdz24nt-hero.glb | 8d ago |
| svdz24nt-hero.overlay.json | 8d ago |
| svdz24nt.glb | 8d ago |
| svdz24nt.kicad_mod | 8d ago |
| svdz24nt.kicad_sym | 8d ago |
| svdz24nt.lbr | 8d ago |
| svdz24nt.step | 8d ago |
SVDZ24NT
Hangzhou Silan Microelectronics · MOSFETs · TO-220
SVDZ24NT from Hangzhou Silan Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; the gate-source voltage is rated ±20 V and the gate threshold voltage VGS(th) is 2.0 V to 4.0 V at ID=250 µA. |
| 2 | Drain | passive | Drain terminal; the drain-source breakdown voltage BVDSS is 55 V minimum and the continuous drain current is 17 A at TC=25°C (12 A at TC=100°C). |
| 3 | Source | passive | Source terminal; the continuous source (body diode) current IS is rated 17 A and the pulsed source current ISM is rated 68 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 55 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 17 | A | TC=25°C | 1 | ||
| Drain Current | ID | 12 | A | TC=100°C | 1 | ||
| Drain Current Pulsed | IDM | 68 | A | 1 | |||
| Power Dissipation | PD | 45 | W | TC=25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 122 | mJ | Note 1: L=1mH, IAS=13A, VDD=25V, RG=25Ω, starting TJ=25°C | 1 | ||
| Operation Junction Temperature Range | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.78 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 55 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 20 | µA | VDS=55V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Static Drain-Source On State Resistance | RDS(on) | 45 | 70 | mΩ | VGS=10V, ID=10A | 2 | |
| Continuous Source Current | IS | 17 | A | Integral Reverse P-N Junction Diode in the MOSFET | 2 | ||
| Pulsed Source Current | ISM | 68 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | IS=10A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SVDZ24NT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
svdz24nt-etched.step/svdz24nt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svdz24nt.step/svdz24nt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (7 pp, sha256
bc64dc571ed05d1d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).