component
SUP90100E-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSUP90100E-GE3
Vishay Intertech · MOSFETs · TO-220AB
SUP90100E-GE3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±20 V maximum and the gate threshold is 2 V to 4 V. |
| 2 | D | passive | Drain, rated for 200 V drain-source voltage and 150 A package-limited continuous current; it is also connected to the mounting tab. |
| 3 | S | passive | Source, the current return of the N-channel MOSFET, with pulsed body-diode current up to 250 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 200 | V | TC = 25 °C | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous drain current | ID | 150 | A | TJ = 150 °C, TC = 25 °C, package limited | 1 | ||
| Pulsed drain current | IDM | 250 | A | t = 100 μs | 1 | ||
| Avalanche current | IAS | 70 | A | 1 | |||
| Single avalanche energy | EAS | 245 | mJ | L = 0.1 mH | 1 | ||
| Maximum power dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 125 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient (PCB mount) | RthJA | 40 | °C/W | When mounted on 1" square PCB (FR4 material) | 1 | ||
| Junction-to-case (drain) | RthJC | 0.4 | °C/W | 1 | |||
| Drain-source breakdown voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-body leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 150 | μA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | mA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | 120 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.0091 | 0.0109 | Ω | VGS = 10 V, ID = 16 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.0095 | 0.0124 | Ω | VGS = 7.5 V, ID = 13 A | 2 | |
| Total gate charge | Qg | 72.8 | 110 | nC | VDS = 100 V, VGS = 10 V, ID = 16 A | 2 | |
| Gate resistance | Rg | 0.7 | 3.5 | 7 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 20 | 40 | ns | VDD = 80 V, RL = 6.2 Ω, ID ≅ 13 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 50 | 100 | ns | VDD = 80 V, RL = 6.2 Ω, ID ≅ 13 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 60 | 120 | ns | VDD = 80 V, RL = 6.2 Ω, ID ≅ 13 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 18 | 36 | ns | VDD = 80 V, RL = 6.2 Ω, ID ≅ 13 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed current (body diode) | ISM | 250 | A | t = 100 μs, TC = 25 °C | 2 | ||
| Forward voltage | VSD | 0.8 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 | |
| Reverse recovery time | trr | 118 | 177 | ns | IF = 13 A, di/dt = 100 A/μs | 2 | |
| Peak reverse recovery charge | IRM(REC) | 9.4 | 14.1 | A | IF = 13 A, di/dt = 100 A/μs | 2 | |
| Reverse recovery charge | Qrr | 0.632 | 0.948 | μC | IF = 13 A, di/dt = 100 A/μs | 2 | |
| Forward transconductance | gfs | 85 | S | VDS = 15 V, ID = 13 A | 2 | ||
| Input capacitance | Ciss | 3930 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 450 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 12 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Gate-source charge | Qgs | 19.4 | nC | VDS = 100 V, VGS = 10 V, ID = 16 A | 2 | ||
| Gate-drain charge | Qgd | 19 | nC | VDS = 100 V, VGS = 10 V, ID = 16 A | 2 | ||
| Reverse recovery fall time | ta | 94 | ns | IF = 13 A, di/dt = 100 A/μs | 2 | ||
| Reverse recovery rise time | tb | 24 | ns | IF = 13 A, di/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
SUP90100E-GE3 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
sup90100e-ge3-etched.step/sup90100e-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sup90100e-ge3.step/sup90100e-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
77d793fe262f0f0b, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).