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SUD90330E-GE3

Vishay Intertech · MOSFETs · TO-252

SUD90330E-GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a threshold of 2 V to 4 V at ID = 250 μA.
2 D passive Drain, connected internally to the tab; drain-source voltage is rated at 200 V maximum.
3 S passive Source; continuous source-drain diode current is rated at 12.5 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS 200 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 200 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 150 μA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS 5 mA VDS = 200 V, VGS = 0 V, TJ = 175 °C 2
On-state drain current ID(on) 20 A VDS ≥ 10 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.0312 0.0375 Ω VGS = 10 V, ID = 12.2 A 2
Drain-source on-state resistance RDS(on) 0.0337 0.0422 Ω VGS = 7.5 V, ID = 11.5 A 2
Total gate charge Qg 21 32 nC VDS = 100 V, VGS =10 V, ID = 12.2 A 2
Gate resistance Rg 0.76 3.8 7.6 Ω f = 1 MHz 2
Turn-on delay time td(on) 12 24 ns VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 25 50 ns VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 30 50 ns VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 22 44 ns VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω 2
Pulse diode forward current ISM 70 A t = 100 μs 2
Body diode voltage VSD 0.8 1.5 V IF = 7 A, VGS = 0 V 2
Body diode reverse recovery time trr 111 170 ns IF = 7 A, di/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 0.51 1 μC IF = 7 A, di/dt = 100 A/μs 2
Body diode peak reverse recovery current IRM(REC) 8.5 17 A IF = 7 A, di/dt = 100 A/μs 2
Drain-source voltage VDS 200 V TA = 25 °C 1
Gate-source voltage VGS -20 20 V TA = 25 °C 1
Continuous drain current ID 35.8 A TC = 25 °C 1
Continuous drain current ID 20.7 A TC = 125 °C 1
Pulsed drain current IDM 70 A t = 100 μs 1
Continuous source-drain diode current IS 12.5 A TA = 25 °C 1
Single pulse avalanche current IAS 33 A L = 0.1 mH 1
Single pulse avalanche energy EAS 54.45 mJ L = 0.1 mH 1
Maximum power dissipation PD 125 W TC = 25 °C 1
Maximum power dissipation PD 41.7 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Soldering recommendations (peak temperature) 260 °C 1
Maximum junction-to-ambient (PCB mount) RthJA 40 °C/W PCB mount, 1" square PCB (FR4) 1
Maximum junction-to-case (drain) RthJC 1.2 °C/W Steady state 1
Forward transconductance gfs 28 S VDS = 15 V, ID = 10 A 2
Input capacitance Ciss 1172 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 150 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 11 pF VDS = 100 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs 6 nC VDS = 100 V, VGS =10 V, ID = 12.2 A 2
Gate-drain charge Qgd 5.3 nC VDS = 100 V, VGS =10 V, ID = 12.2 A 2
Reverse recovery fall time ta 94 ns IF = 7 A, di/dt = 100 A/μs 2
Reverse recovery rise time tb 17 ns IF = 7 A, di/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: SUD90330E-GE3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sud90330e-ge3-etched.step / sud90330e-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sud90330e-ge3.step / sud90330e-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 372000046ace8e70, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF