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SUD90330E-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSUD90330E-GE3
Vishay Intertech · MOSFETs · TO-252
SUD90330E-GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a threshold of 2 V to 4 V at ID = 250 μA. |
| 2 | D | passive | Drain, connected internally to the tab; drain-source voltage is rated at 200 V maximum. |
| 3 | S | passive | Source; continuous source-drain diode current is rated at 12.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 150 | μA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | mA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | 20 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.0312 | 0.0375 | Ω | VGS = 10 V, ID = 12.2 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.0337 | 0.0422 | Ω | VGS = 7.5 V, ID = 11.5 A | 2 | |
| Total gate charge | Qg | 21 | 32 | nC | VDS = 100 V, VGS =10 V, ID = 12.2 A | 2 | |
| Gate resistance | Rg | 0.76 | 3.8 | 7.6 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 12 | 24 | ns | VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 25 | 50 | ns | VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 30 | 50 | ns | VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 22 | 44 | ns | VDD = 100 V, RL = 14.2 Ω, ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulse diode forward current | ISM | 70 | A | t = 100 μs | 2 | ||
| Body diode voltage | VSD | 0.8 | 1.5 | V | IF = 7 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 111 | 170 | ns | IF = 7 A, di/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.51 | 1 | μC | IF = 7 A, di/dt = 100 A/μs | 2 | |
| Body diode peak reverse recovery current | IRM(REC) | 8.5 | 17 | A | IF = 7 A, di/dt = 100 A/μs | 2 | |
| Drain-source voltage | VDS | 200 | V | TA = 25 °C | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous drain current | ID | 35.8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | 20.7 | A | TC = 125 °C | 1 | ||
| Pulsed drain current | IDM | 70 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | 12.5 | A | TA = 25 °C | 1 | ||
| Single pulse avalanche current | IAS | 33 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 54.45 | mJ | L = 0.1 mH | 1 | ||
| Maximum power dissipation | PD | 125 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 41.7 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 260 | °C | 1 | ||||
| Maximum junction-to-ambient (PCB mount) | RthJA | 40 | °C/W | PCB mount, 1" square PCB (FR4) | 1 | ||
| Maximum junction-to-case (drain) | RthJC | 1.2 | °C/W | Steady state | 1 | ||
| Forward transconductance | gfs | 28 | S | VDS = 15 V, ID = 10 A | 2 | ||
| Input capacitance | Ciss | 1172 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 150 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 11 | pF | VDS = 100 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-source charge | Qgs | 6 | nC | VDS = 100 V, VGS =10 V, ID = 12.2 A | 2 | ||
| Gate-drain charge | Qgd | 5.3 | nC | VDS = 100 V, VGS =10 V, ID = 12.2 A | 2 | ||
| Reverse recovery fall time | ta | 94 | ns | IF = 7 A, di/dt = 100 A/μs | 2 | ||
| Reverse recovery rise time | tb | 17 | ns | IF = 7 A, di/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
SUD90330E-GE3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sud90330e-ge3-etched.step/sud90330e-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sud90330e-ge3.step/sud90330e-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
372000046ace8e70, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).