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STW6N90K5
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STMicroelectronics MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTW6N90K5
STMicroelectronics · MOSFETs · TO-247
STW6N90K5 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MDmesh K5 N-channel power MOSFET, which the datasheet states is Zener-protected. |
| 2 | D | passive | Drain terminal, also connected to the TAB, for the 900 V N-channel MOSFET rated at VDS 900 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, carrying a continuous drain current of 6 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 900 | V | VGS = 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 900 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 50 | µA | VGS = 0 V, VDS = 900 V, TC = 125 °C (specified by design, not tested in production) | 3 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 910 | 1100 | mΩ | VGS = 10 V, ID = 3 A | 3 | |
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 6 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 4 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 24 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 110 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 6 A, di/dt = 100 A/µs, VDS(peak) < V(BR)DSS, VDD = 450 V | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDD ≤ 720 V | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or non-repetitive | IAR | 2 | A | Pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 210 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Source-drain current | ISD | 6 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 24 | A | 4 | |||
| Forward on voltage | VSD | 1.5 | V | VGS = 0 V, ISD = 6 A | 4 | ||
| Thermal resistance, junction-to-case | RthJC | 1.14 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 50 | °C/W | 2 | |||
| Input capacitance | Ciss | 342 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 31 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Reverse transfer capacitance | Crss | 1.2 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Equivalent output capacitance time related | Co(tr) | 55 | pF | VDS = 0 to 720 V, VGS = 0 V | 3 | ||
| Equivalent output capacitance energy related | Co(er) | 20 | pF | VDS = 0 to 720 V, VGS = 0 V | 3 | ||
| Intrinsic gate resistance | Rg | 6.4 | Ω | f = 1 MHz, ID = 0 A | 3 | ||
| Total gate charge | Qg | 11 | nC | VDD = 720 V, ID = 6 A, VGS = 0 to 10 V | 3 | ||
| Gate-source charge | Qgs | 2.5 | nC | VDD = 720 V, ID = 6 A, VGS = 0 to 10 V | 3 | ||
| Gate-drain charge | Qgd | 7 | nC | VDD = 720 V, ID = 6 A, VGS = 0 to 10 V | 3 | ||
| Turn-on delay time | td(on) | 12.4 | ns | VDD = 450 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Rise time | tr | 12.2 | ns | VDD = 450 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Turn-off delay time | td(off) | 30.4 | ns | VDD = 450 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Fall time | tf | 15.5 | ns | VDD = 450 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Reverse recovery time | trr | 342 | ns | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery charge | Qrr | 3.13 | µC | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery current | IRRM | 18.3 | A | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery time at TJ = 150 °C | trr | 536 | ns | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 | ||
| Reverse recovery charge at TJ = 150 °C | Qrr | 4.42 | µC | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 | ||
| Reverse recovery current at TJ = 150 °C | IRRM | 16.5 | A | ISD = 6 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |
CAD (KiCad official)
- Symbol:
STW6N90K5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
stw6n90k5-etched.step/stw6n90k5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stw6n90k5.step/stw6n90k5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
69390a7cdf875cc8, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).