component
STTH3R02S
Public Made by Adomby adom
STMicroelectronics Fast Recovery / High Efficiency Diodes, SMC. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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STTH3R02S
STMicroelectronics · Fast Recovery / High Efficiency Diodes · SMC
STTH3R02S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | 2 | |||
| Repetitive peak forward current | IFRM | 110 | A | tp = 5 µs, F = 5 kHz | 2 | ||
| Forward rms current (SMC) | IF(RMS) | 70 | A | SMC package | 2 | ||
| Average forward current (SMC) | IF(AV) | 3 | A | δ = 0.5, SMC Tc = 110 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 75 | A | tp = 10 ms sinusoidal | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | 175 | °C | 2 | |||
| Maximum lead temperature for soldering | TL | 230 | °C | during 10 s at 4 mm from case | 2 | ||
| Junction to case thermal resistance (SMC) | Rth(j-c) | 20 | °C/W | SMC package | 2 | ||
| Reverse leakage current | IR | 3 | µA | Tj = 25 °C, VR = VRRM | 2 | ||
| Reverse leakage current | IR | 3 | 30 | µA | Tj = 125 °C, VR = VRRM | 2 | |
| Forward voltage drop | VF | 1.2 | V | Tj = 25 °C, IF = 9 A, pulse tp = 380 µs, δ < 2 % | 2 | ||
| Forward voltage drop | VF | 0.89 | 1 | V | Tj = 25 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 | |
| Forward voltage drop | VF | 0.76 | 0.85 | V | Tj = 100 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 | |
| Forward voltage drop | VF | 0.7 | 0.8 | V | Tj = 150 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 | |
| Reverse recovery time | trr | 24 | 30 | ns | IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C | 3 | |
| Reverse recovery time | trr | 16 | 20 | ns | IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C | 3 | |
| Reverse recovery current | IRM | 3.5 | 4.5 | A | IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125 °C | 3 | |
| Forward recovery time | tfr | 40 | ns | IF = 3 A, dIF/dt = 100 A/µs, VFR = 1.1 x VFmax, Tj = 25 °C | 3 | ||
| Forward recovery voltage | VFP | 1.9 | V | IF = 3 A, dIF/dt = 100 A/µs, Tj = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
STTH3R02S - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
stth3r02s-etched.step/stth3r02s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stth3r02s.step/stth3r02s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (9 pp, sha256
553c63f695652d6e, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STTH3R02S
**STMicroelectronics** · Fast Recovery / High Efficiency Diodes · SMC
STTH3R02S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 200 | V | | 2 |
| Repetitive peak forward current | IFRM | | | 110 | A | tp = 5 µs, F = 5 kHz | 2 |
| Forward rms current (SMC) | IF(RMS) | | | 70 | A | SMC package | 2 |
| Average forward current (SMC) | IF(AV) | | | 3 | A | δ = 0.5, SMC Tc = 110 °C | 2 |
| Surge non repetitive forward current | IFSM | | | 75 | A | tp = 10 ms sinusoidal | 2 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 2 |
| Maximum operating junction temperature | Tj | | | 175 | °C | | 2 |
| Maximum lead temperature for soldering | TL | | | 230 | °C | during 10 s at 4 mm from case | 2 |
| Junction to case thermal resistance (SMC) | Rth(j-c) | | | 20 | °C/W | SMC package | 2 |
| Reverse leakage current | IR | | | 3 | µA | Tj = 25 °C, VR = VRRM | 2 |
| Reverse leakage current | IR | | 3 | 30 | µA | Tj = 125 °C, VR = VRRM | 2 |
| Forward voltage drop | VF | | | 1.2 | V | Tj = 25 °C, IF = 9 A, pulse tp = 380 µs, δ < 2 % | 2 |
| Forward voltage drop | VF | | 0.89 | 1 | V | Tj = 25 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 |
| Forward voltage drop | VF | | 0.76 | 0.85 | V | Tj = 100 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 |
| Forward voltage drop | VF | | 0.7 | 0.8 | V | Tj = 150 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 % | 2 |
| Reverse recovery time | trr | | 24 | 30 | ns | IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C | 3 |
| Reverse recovery time | trr | | 16 | 20 | ns | IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C | 3 |
| Reverse recovery current | IRM | | 3.5 | 4.5 | A | IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125 °C | 3 |
| Forward recovery time | tfr | | | 40 | ns | IF = 3 A, dIF/dt = 100 A/µs, VFR = 1.1 x VFmax, Tj = 25 °C | 3 |
| Forward recovery voltage | VFP | | | 1.9 | V | IF = 3 A, dIF/dt = 100 A/µs, Tj = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `STTH3R02S`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `stth3r02s-etched.step` / `stth3r02s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stth3r02s.step` / `stth3r02s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588909420814479360) (9 pp, sha256 `553c63f695652d6e`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stth3r02s-datasheet.pdf)