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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

STTH3R02S

STMicroelectronics · Fast Recovery / High Efficiency Diodes · SMC

STTH3R02S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2	A	passive	Anode.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	SMC
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Repetitive peak reverse voltage	VRRM			200	V		2
Repetitive peak forward current	IFRM			110	A	tp = 5 µs, F = 5 kHz	2
Forward rms current (SMC)	IF(RMS)			70	A	SMC package	2
Average forward current (SMC)	IF(AV)			3	A	δ = 0.5, SMC Tc = 110 °C	2
Surge non repetitive forward current	IFSM			75	A	tp = 10 ms sinusoidal	2
Storage temperature range	Tstg	-65		175	°C		2
Maximum operating junction temperature	Tj			175	°C		2
Maximum lead temperature for soldering	TL			230	°C	during 10 s at 4 mm from case	2
Junction to case thermal resistance (SMC)	Rth(j-c)			20	°C/W	SMC package	2
Reverse leakage current	IR			3	µA	Tj = 25 °C, VR = VRRM	2
Reverse leakage current	IR		3	30	µA	Tj = 125 °C, VR = VRRM	2
Forward voltage drop	VF			1.2	V	Tj = 25 °C, IF = 9 A, pulse tp = 380 µs, δ < 2 %	2
Forward voltage drop	VF		0.89	1	V	Tj = 25 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 %	2
Forward voltage drop	VF		0.76	0.85	V	Tj = 100 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 %	2
Forward voltage drop	VF		0.7	0.8	V	Tj = 150 °C, IF = 3 A, pulse tp = 380 µs, δ < 2 %	2
Reverse recovery time	trr		24	30	ns	IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C	3
Reverse recovery time	trr		16	20	ns	IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C	3
Reverse recovery current	IRM		3.5	4.5	A	IF = 3 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125 °C	3
Forward recovery time	tfr			40	ns	IF = 3 A, dIF/dt = 100 A/µs, VFR = 1.1 x VFmax, Tj = 25 °C	3
Forward recovery voltage	VFP			1.9	V	IF = 3 A, dIF/dt = 100 A/µs, Tj = 25 °C	3

CAD (KiCad official)

Symbol: STTH3R02S
Footprint: Diode_SMD:D_SMC
3D model: SMC (KiCad packages3D, STEP)
3D model files: stth3r02s-etched.step / stth3r02s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth3r02s.step / stth3r02s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (9 pp, sha256 553c63f695652d6e, retrieved 2026-10-14, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF