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Ray sts10dn3lh5: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) 75db08a 1mo ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "sts10dn3lh5",
  "title": "STS10DN3LH5",
  "brief": "STMicroelectronics MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "sts10dn3lh5"
  ],
  "component": {
    "mpn": "STS10DN3LH5",
    "manufacturer": "STMicroelectronics",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603086145626923008",
    "parts": {
      "symbol": "sts10dn3lh5.kicad_sym",
      "footprint": "sts10dn3lh5.kicad_mod",
      "model_3d": "sts10dn3lh5-etched.glb",
      "model_3d_plain": "sts10dn3lh5.glb",
      "model_3d_step": "sts10dn3lh5-etched.step",
      "model_3d_step_plain": "sts10dn3lh5.step",
      "lbr": "sts10dn3lh5.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of MOSFET 1. Return terminal for MOSFET 1 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 1 intrinsic body diode (VSD typ 1.1 V at ISD = 5 A)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of MOSFET 1. Control input; VGS(th) typ 1 V (at ID = 250 µA), VGS absolute max ±22 V. Total gate charge Qg typ 4.6 nC at VGS = 5 V, VDD = 15 V, ID = 10 A."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of MOSFET 2. Return terminal for MOSFET 2 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 2 intrinsic body diode."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of MOSFET 2. Control input; VGS(th) typ 1 V, VGS absolute max ±22 V. Independent from G1 (dual device with two separate control gates)."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET 2 (pin 5 of the D2 pair). Tied internally to pin 6 to double the drain bond-wire/lead current capacity. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET 2 (pin 6 of the D2 pair). Internally common with pin 5. Also cathode of MOSFET 2 intrinsic body diode."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET 1 (pin 7 of the D1 pair). Internally common with pin 8. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET 1 (pin 8 of the D1 pair). Tied internally to pin 7 to double the drain lead current capacity. Also cathode of MOSFET 1 intrinsic body diode."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603086145626923008",
        "pages": null,
        "sha256": "3ef6beac225d39d4",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "sts10dn3lh5.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6.0,
          4.9,
          1.75
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "sts10dn3lh5-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6.0,
          4.9,
          1.75
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "81f4c7220f04775ae8b8ee22df485e4cfb1a225cc9c47e7dbc1873532e54ce14",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    }
  },
  "variants": [
    {
      "mpn": "STS10DN3LH5",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "sts10dn3lh5"
  ],
  "discovery_pitch": "STS10DN3LH5 (STMicroelectronics) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "sts10dn3lh5.kicad_sym",
    "sts10dn3lh5.kicad_mod",
    "sts10dn3lh5.glb",
    "sts10dn3lh5.step",
    "sts10dn3lh5.lbr",
    "docs/hero.png",
    "docs/sts10dn3lh5-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-25T09:08:00.188Z"
}