component
STR2N2VH5
Public Made by Adomby adom
STMicroelectronics MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STR2N2VH5
STMicroelectronics · MOSFETs · SOT-23-3
STR2N2VH5 from STMicroelectronics, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, rated for gate-source voltage of ±8 V absolute maximum with gate threshold voltage of 0.7 V (VDS = VGS, ID = 250 µA). |
| 2 | S | passive | Source; connected to the body diode anode, with continuous source-drain current up to 2.3 A. |
| 3 | D | passive | Drain; rated for drain-source voltage of 20 V and continuous drain current of 2.3 A at Tpcb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0, VDS = 20 V | 4 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VGS = 0, VDS = 20 V, TC=125 °C | 4 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0, VGS = ± 8 V | 4 | |
| Gate threshold voltage | VGS(th) | 0.7 | V | VDS = VGS, ID = 250 µA | 4 | ||
| Static drain-source on-resistance | RDS(on) | 0.025 | 0.03 | Ω | VGS = 4.5 V, ID = 2 A | 4 | |
| Static drain-source on-resistance | RDS(on) | 0.031 | 0.04 | Ω | VGS = 2.5 V, ID = 2 A | 4 | |
| Source-drain current | ISD | 2.3 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 9.2 | A | 5 | |||
| Forward on voltage | VSD | 1.1 | V | VGS = 0, ISD = 2 A | 5 | ||
| Drain-source voltage | VDS | 20 | V | 3 | |||
| Gate-source voltage | VGS | -8 | 8 | V | 3 | ||
| Drain current (continuous) | ID | 2.3 | A | Tpcb = 25 °C | 3 | ||
| Drain current (continuous) | ID | 1.4 | A | Tpcb = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 9.2 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 0.35 | W | Tpcb = 25 °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Max. operating junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-pcb | Rthj-pcb | 357 | °C/W | Mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec | 3 | ||
| Input capacitance | Ciss | 367 | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 | ||
| Output capacitance | Coss | 92 | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 | ||
| Reverse transfer capacitance | Crss | 16 | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 | ||
| Total gate charge | Qg | 4.6 | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 | ||
| Gate-source charge | Qgs | 0.9 | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 | ||
| Gate-drain charge | Qgd | 1 | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 | ||
| Voltage delay time | td(on) | 4.8 | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 | ||
| Voltage rise time | tr (V) | 14.4 | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 | ||
| Current fall time | td (off) | 17 | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 | ||
| Crossing time | tf | 4 | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 | ||
| Reverse recovery time | trr | 10 | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 | ||
| Reverse recovery charge | Qrr | 24 | nC | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 | ||
| Reverse recovery current | IRRM | 4.8 | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 |
CAD (KiCad official)
- Symbol:
STR2N2VH5 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
str2n2vh5-etched.step/str2n2vh5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);str2n2vh5.step/str2n2vh5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
2823fe899aee59d8, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STR2N2VH5
**STMicroelectronics** · MOSFETs · SOT-23-3
STR2N2VH5 from STMicroelectronics, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, rated for gate-source voltage of ±8 V absolute maximum with gate threshold voltage of 0.7 V (VDS = VGS, ID = 250 µA). |
| 2 | S | passive | Source; connected to the body diode anode, with continuous source-drain current up to 2.3 A. |
| 3 | D | passive | Drain; rated for drain-source voltage of 20 V and continuous drain current of 2.3 A at Tpcb = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0, ID = 1 mA | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0, VDS = 20 V | 4 |
| Zero gate voltage drain current | IDSS | | | 10 | µA | VGS = 0, VDS = 20 V, TC=125 °C | 4 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS = 0, VGS = ± 8 V | 4 |
| Gate threshold voltage | VGS(th) | 0.7 | | | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | | 0.025 | 0.03 | Ω | VGS = 4.5 V, ID = 2 A | 4 |
| Static drain-source on-resistance | RDS(on) | | 0.031 | 0.04 | Ω | VGS = 2.5 V, ID = 2 A | 4 |
| Source-drain current | ISD | | | 2.3 | A | | 5 |
| Source-drain current (pulsed) | ISDM | | | 9.2 | A | | 5 |
| Forward on voltage | VSD | | | 1.1 | V | VGS = 0, ISD = 2 A | 5 |
| Drain-source voltage | VDS | | | 20 | V | | 3 |
| Gate-source voltage | VGS | -8 | | 8 | V | | 3 |
| Drain current (continuous) | ID | | | 2.3 | A | Tpcb = 25 °C | 3 |
| Drain current (continuous) | ID | | | 1.4 | A | Tpcb = 100 °C | 3 |
| Drain current (pulsed) | IDM | | | 9.2 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT | | | 0.35 | W | Tpcb = 25 °C | 3 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
| Max. operating junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Thermal resistance junction-pcb | Rthj-pcb | | | 357 | °C/W | Mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec | 3 |
| Input capacitance | Ciss | | 367 | | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 |
| Output capacitance | Coss | | 92 | | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 |
| Reverse transfer capacitance | Crss | | 16 | | pF | VGS = 0, VDS = 16 V, f = 1 MHz | 4 |
| Total gate charge | Qg | | 4.6 | | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 |
| Gate-source charge | Qgs | | 0.9 | | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 |
| Gate-drain charge | Qgd | | 1 | | nC | VDD = 16 V, ID = 2 A, VGS = 4.5 V | 4 |
| Voltage delay time | td(on) | | 4.8 | | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 |
| Voltage rise time | tr (V) | | 14.4 | | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 |
| Current fall time | td (off) | | 17 | | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 |
| Crossing time | tf | | 4 | | ns | VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V | 4 |
| Reverse recovery time | trr | | 10 | | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 |
| Reverse recovery charge | Qrr | | 24 | | nC | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 |
| Reverse recovery current | IRRM | | 4.8 | | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C | 5 |
## CAD (KiCad official)
- Symbol: `STR2N2VH5`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `str2n2vh5-etched.step` / `str2n2vh5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `str2n2vh5.step` / `str2n2vh5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/str2n2vh5.pdf) (13 pp, sha256 `2823fe899aee59d8`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/str2n2vh5-datasheet.pdf)