component

STR2N2VH5

Public Made by Adom

by adom

STMicroelectronics MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstr2n2vh5factory-2.0.0extractor-text

Verified STR2N2VH5

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STR2N2VH5 · SOT-23-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • ✓distributor: lcsc C2969837, digikey 497-13883-2-ND, mouser 511-STR2N2VH5
  • ✓family: SOT-23-3
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ctdnef1v/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.10)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ str2n2vh5.kicad_sym✓ str2n2vh5.kicad_mod✓ str2n2vh5.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

STR2N2VH5

STMicroelectronics · MOSFETs · SOT-23-3

STR2N2VH5 from STMicroelectronics, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; control input, rated for gate-source voltage of ±8 V absolute maximum with gate threshold voltage of 0.7 V (VDS = VGS, ID = 250 µA).
2 S passive Source; connected to the body diode anode, with continuous source-drain current up to 2.3 A.
3 D passive Drain; rated for drain-source voltage of 20 V and continuous drain current of 2.3 A at Tpcb = 25 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0, ID = 1 mA 4
Zero gate voltage drain current IDSS 1 µA VGS = 0, VDS = 20 V 4
Zero gate voltage drain current IDSS 10 µA VGS = 0, VDS = 20 V, TC=125 °C 4
Gate-body leakage current IGSS -100 100 nA VDS = 0, VGS = ± 8 V 4
Gate threshold voltage VGS(th) 0.7 V VDS = VGS, ID = 250 µA 4
Static drain-source on-resistance RDS(on) 0.025 0.03 Ω VGS = 4.5 V, ID = 2 A 4
Static drain-source on-resistance RDS(on) 0.031 0.04 Ω VGS = 2.5 V, ID = 2 A 4
Source-drain current ISD 2.3 A 5
Source-drain current (pulsed) ISDM 9.2 A 5
Forward on voltage VSD 1.1 V VGS = 0, ISD = 2 A 5
Drain-source voltage VDS 20 V 3
Gate-source voltage VGS -8 8 V 3
Drain current (continuous) ID 2.3 A Tpcb = 25 °C 3
Drain current (continuous) ID 1.4 A Tpcb = 100 °C 3
Drain current (pulsed) IDM 9.2 A Pulse width limited by safe operating area 3
Total dissipation PTOT 0.35 W Tpcb = 25 °C 3
Storage temperature Tstg -55 150 °C 3
Max. operating junction temperature Tj -55 150 °C 3
Thermal resistance junction-pcb Rthj-pcb 357 °C/W Mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec 3
Input capacitance Ciss 367 pF VGS = 0, VDS = 16 V, f = 1 MHz 4
Output capacitance Coss 92 pF VGS = 0, VDS = 16 V, f = 1 MHz 4
Reverse transfer capacitance Crss 16 pF VGS = 0, VDS = 16 V, f = 1 MHz 4
Total gate charge Qg 4.6 nC VDD = 16 V, ID = 2 A, VGS = 4.5 V 4
Gate-source charge Qgs 0.9 nC VDD = 16 V, ID = 2 A, VGS = 4.5 V 4
Gate-drain charge Qgd 1 nC VDD = 16 V, ID = 2 A, VGS = 4.5 V 4
Voltage delay time td(on) 4.8 ns VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V 4
Voltage rise time tr (V) 14.4 ns VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V 4
Current fall time td (off) 17 ns VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V 4
Crossing time tf 4 ns VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V 4
Reverse recovery time trr 10 ns ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C 5
Reverse recovery charge Qrr 24 nC ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C 5
Reverse recovery current IRRM 4.8 A ISD = 2 A, di/dt = 100 A/µs, VDD = 16 V, Tj = 150 °C 5

CAD (KiCad official)

  • Symbol: STR2N2VH5
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: str2n2vh5-etched.step / str2n2vh5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); str2n2vh5.step / str2n2vh5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 2823fe899aee59d8, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF