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STQ1NK80ZR-AP
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STMicroelectronics MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STQ1NK80ZR-AP
STMicroelectronics · MOSFETs · TO-92-3
STQ1NK80ZR-AP from STMicroelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input with maximum absolute voltage rating of ±30 V and gate threshold voltage range of 3.0 to 4.5 V at VDS = VGS and ID = 50 µA. |
| 2 | D | output | Drain terminal with maximum drain-source voltage rating of 800 V and maximum continuous drain current of 0.3 A at 25°C. |
| 3 | S | power_in | Source terminal serving as the ground return path for the drain-source channel in this N-channel power MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-92-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STQ1NK80ZR-AP - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
stq1nk80zr-ap-etched.step/stq1nk80zr-ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stq1nk80zr-ap.step/stq1nk80zr-ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
1bd60965dcad5b26, retrieved 2026-10-01, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STQ1NK80ZR-AP
**STMicroelectronics** · MOSFETs · TO-92-3
STQ1NK80ZR-AP from STMicroelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input with maximum absolute voltage rating of ±30 V and gate threshold voltage range of 3.0 to 4.5 V at VDS = VGS and ID = 50 µA. |
| 2 | D | output | Drain terminal with maximum drain-source voltage rating of 800 V and maximum continuous drain current of 0.3 A at 25°C. |
| 3 | S | power_in | Source terminal serving as the ground return path for the drain-source channel in this N-channel power MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-92-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STQ1NK80ZR-AP`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files: `stq1nk80zr-ap-etched.step` / `stq1nk80zr-ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stq1nk80zr-ap.step` / `stq1nk80zr-ap.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stq1nk80zr-ap.pdf) (12 pp, sha256 `1bd60965dcad5b26`, retrieved 2026-10-01, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stq1nk80zr-ap-datasheet.pdf)