component
STQ1NK80ZR-AP
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# STQ1NK80ZR-AP++**STMicroelectronics** · MOSFETs · TO-92-3++STQ1NK80ZR-AP from STMicroelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate control input with maximum absolute voltage rating of ±30 V and gate threshold voltage range of 3.0 to 4.5 V at VDS = VGS and ID = 50 µA. |+| 2 | D | output | Drain terminal with maximum drain-source voltage rating of 800 V and maximum continuous drain current of 0.3 A at 25°C. |+| 3 | S | power_in | Source terminal serving as the ground return path for the drain-source channel in this N-channel power MOSFET. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | TO-92-3 |+| Category | Triode/MOS Tube/Transistor |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STQ1NK80ZR-AP`+- Footprint: `Package_TO_SOT_THT:TO-92_Inline`+- 3D model: TO-92-3 (KiCad packages3D, STEP)+- 3D model files: `stq1nk80zr-ap-etched.step` / `stq1nk80zr-ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stq1nk80zr-ap.step` / `stq1nk80zr-ap.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stq1nk80zr-ap.pdf) (12 pp, sha256 `1bd60965dcad5b26`, retrieved 2026-10-01, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/stq1nk80zr-ap-datasheet.pdf)
page.jsonadded+126@@ -0,0 +1,126 @@+{+ "slug": "stq1nk80zr-ap",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "triode-mos tube-transistor",+ "stq1nk80zr-ap",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "stq1nk80zr-ap.kicad_sym",+ "stq1nk80zr-ap.kicad_mod",+ "stq1nk80zr-ap.glb",+ "stq1nk80zr-ap.step",+ "stq1nk80zr-ap.lbr",+ "docs/hero.png",+ "docs/stq1nk80zr-ap-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "STQ1NK80ZR-AP",+ "manufacturer": "STMicroelectronics",+ "package": "TO-92-3",+ "pin_count": 3,+ "category": "Triode/MOS Tube/Transistor",+ "subcategory": "MOSFETs",+ "datasheet": "https://www.st.com/resource/en/datasheet/stq1nk80zr-ap.pdf",+ "parts": {+ "symbol": "stq1nk80zr-ap.kicad_sym",+ "footprint": "stq1nk80zr-ap.kicad_mod",+ "model_3d": "stq1nk80zr-ap-etched.glb",+ "model_3d_plain": "stq1nk80zr-ap.glb",+ "model_3d_step": "stq1nk80zr-ap-etched.step",+ "model_3d_step_plain": "stq1nk80zr-ap.step",+ "lbr": "stq1nk80zr-ap.lbr"+ },+ "distributor_links": {+ "lcsc": "C501058",+ "digikey": "497-6197-1-ND",+ "mouser": "511-STQ1NK80ZR-AP"+ },+ "distributor_check": {+ "checked_at": "2026-10-01T02:05:02Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "497-6197-1-ND",+ "status": "found",+ "lifecycle": "Active"+ },+ "mouser": {+ "pn": "511-STQ1NK80ZR-AP",+ "status": "found"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate control input with maximum absolute voltage rating of ±30 V and gate threshold voltage range of 3.0 to 4.5 V at VDS = VGS and ID = 50 µA."+ },+ {+ "number": "2",+ "name": "D",+ "type": "output",+ "description": "Drain terminal with maximum drain-source voltage rating of 800 V and maximum continuous drain current of 0.3 A at 25°C."+ },+ {+ "number": "3",+ "name": "S",+ "type": "power_in",+ "description": "Source terminal serving as the ground return path for the drain-source channel in this N-channel power MOSFET."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [],+ "pages_sent": 12,+ "cost_usd": 0.0784,+ "at": "2026-10-01T02:04:48"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/stq1nk80zr-ap.pdf",+ "pages": 12,+ "sha256": "1bd60965dcad5b26",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}