# STQ1HNK60R-AP

**STMicroelectronics** · MOSFETs · TO-92

STQ1HNK60R-AP from STMicroelectronics, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±30 V (Table 1). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for 600 V drain-source voltage and 0.4 A continuous drain current at TL = 25 °C (Table 1). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with source-drain diode forward current limited to 0.4 A (Table 7). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 600 | V |  | 2 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain current (continuous) at TL = 25 °C | ID |  |  | 0.4 | A | Drain current (continuous) at TL = 25 °C | 2 |
| Drain current (continuous) at TL = 100 °C | ID |  |  | 0.25 | A | Drain current (continuous) at TL = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 1.6 | A | Pulse width limited by safe operating area | 2 |
| Total dissipation at TL = 25 °C | PTOT |  |  | 3 | W | TL = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt |  |  | 3 | V/ns | ISD ≤ 0.4 A, di/dt ≤ 100 A/μs, VDD ≤ V(BR)DSS | 2 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 2 |
| Avalanche current, repetitive or not-repetitive | IAR |  |  | 0.4 | A | Pulse width limited by TJ max. | 2 |
| Single pulse avalanche energy | EAS |  |  | 25 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |
| Thermal resistance, junction-to-ambient | RthJA |  |  | 120 | °C/W |  | 2 |
| Thermal resistance, junction-to-lead | RthJL |  |  | 40 | °C/W |  | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±30 V | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |
| Zero gate voltage drain current at TC = 125 °C | IDSS |  |  | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 1 mA, VGS = 0 V | 3 |
| Gate threshold voltage | VGS(th) | 2.25 | 3 | 3.7 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on resistance | RDS(on) |  | 7.3 | 8.5 | Ω | VGS = 10 V, ID = 0.5 A | 3 |
| Source-drain current | ISD |  |  | 0.4 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 1.6 | A | Pulse width limited by safe operating area | 4 |
| Forward on voltage | VSD |  |  | 1.6 | V | ISD = 0.4 A, VGS = 0 V | 4 |
| Input capacitance | Ciss |  | 156 |  | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 |
| Output capacitance | Coss |  | 23.5 |  | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 |
| Reverse transfer capacitance | Crss |  | 3.8 |  | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 3 |
| Total gate charge | Qg |  | 7 | 10 | nC | VDD = 480 V, ID = 1 A, VGS = 0 to 10 V | 3 |
| Gate-source charge | Qgs |  | 1.1 |  | nC | VDD = 480 V, ID = 1 A, VGS = 0 to 10 V | 3 |
| Gate-drain charge | Qgd |  | 3.7 |  | nC | VDD = 480 V, ID = 1 A, VGS = 0 to 10 V | 3 |
| Turn-on delay time | td(on) |  | 6.5 |  | ns | VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Rise time | tr |  | 5 |  | ns | VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Turn-off delay time | td(off) |  | 19 |  | ns | VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Fall time | tf |  | 25 |  | ns | VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Reverse recovery time | trr |  | 140 |  | ns | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V | 4 |
| Reverse recovery charge | Qrr |  | 240 |  | nC | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V | 4 |
| Reverse recovery current | IRRM |  | 3.3 |  | A | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V | 4 |
| Reverse recovery time at TJ = 150 °C | trr |  | 229 |  | ns | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C | 4 |
| Reverse recovery charge at TJ = 150 °C | Qrr |  | 377 |  | nC | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C | 4 |
| Reverse recovery current at TJ = 150 °C | IRRM |  | 3.3 |  | A | ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C | 4 |

## CAD (KiCad official)

- Symbol: `STQ1HNK60R-AP`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `stq1hnk60r-ap-etched.step` / `stq1hnk60r-ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stq1hnk60r-ap.step` / `stq1hnk60r-ap.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stq1hnk60r-ap.pdf) (12 pp, sha256 `38fea8160a04f8e1`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stq1hnk60r-ap-datasheet.pdf)