component

STQ1HNK60R-AP

Public Made by Adom

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STMicroelectronics MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstq1hnk60r-apfactory-2.0.0extractor-text

Verified STQ1HNK60R-AP

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STQ1HNK60R-AP · TO-92 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 12-page datasheet
  • ✓distributor: lcsc C2688541, digikey 497-15648-1-ND, mouser 511-STQ1HNK60R-AP
  • ✓family: TO-92_Inline
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-h3h615qf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stq1hnk60r-ap.kicad_sym✓ stq1hnk60r-ap.kicad_mod✓ stq1hnk60r-ap.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15h ago
viewers stq1hnk60r-ap: viewers · Ray 15h ago
package.json Publish 0.1.0 · Ray 15h ago
page.json Set visibility: public · Ray 15h ago
README.md Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap-etched.glb Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap-etched.step stq1hnk60r-ap: factory component page (tier=mfr) · Ray 15h ago
stq1hnk60r-ap-hero.glb stq1hnk60r-ap: hero GLB from the etched model (keeps the MPN mark) · Ray 15h ago
stq1hnk60r-ap-hero.overlay.json Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap.glb Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap.kicad_mod Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap.kicad_sym Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap.lbr Publish 0.1.0 · Ray 15h ago
stq1hnk60r-ap.step Publish 0.1.0 · Ray 15h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 15h ago

STQ1HNK60R-AP

STMicroelectronics · MOSFETs · TO-92

STQ1HNK60R-AP from STMicroelectronics, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±30 V (Table 1).
2 D passive Drain terminal of the N-channel MOSFET, rated for 600 V drain-source voltage and 0.4 A continuous drain current at TL = 25 °C (Table 1).
3 S passive Source terminal of the N-channel MOSFET, with source-drain diode forward current limited to 0.4 A (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 600 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) at TL = 25 °C ID 0.4 A Drain current (continuous) at TL = 25 °C 2
Drain current (continuous) at TL = 100 °C ID 0.25 A Drain current (continuous) at TL = 100 °C 2
Drain current (pulsed) IDM 1.6 A Pulse width limited by safe operating area 2
Total dissipation at TL = 25 °C PTOT 3 W TL = 25 °C 2
Peak diode recovery voltage slope dv/dt 3 V/ns ISD ≤ 0.4 A, di/dt ≤ 100 A/μs, VDD ≤ V(BR)DSS 2
Operating junction temperature range TJ -55 150 °C 2
Avalanche current, repetitive or not-repetitive IAR 0.4 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 25 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance, junction-to-ambient RthJA 120 °C/W 2
Thermal resistance, junction-to-lead RthJL 40 °C/W 2
Gate-body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±30 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 50 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) 3
Drain-source breakdown voltage V(BR)DSS 600 V ID = 1 mA, VGS = 0 V 3
Gate threshold voltage VGS(th) 2.25 3 3.7 V VDS = VGS, ID = 250 µA 3
Static drain-source on resistance RDS(on) 7.3 8.5 Ω VGS = 10 V, ID = 0.5 A 3
Source-drain current ISD 0.4 A 4
Source-drain current (pulsed) ISDM 1.6 A Pulse width limited by safe operating area 4
Forward on voltage VSD 1.6 V ISD = 0.4 A, VGS = 0 V 4
Input capacitance Ciss 156 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Output capacitance Coss 23.5 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Reverse transfer capacitance Crss 3.8 pF VDS = 25 V, f = 1 MHz, VGS = 0 V 3
Total gate charge Qg 7 10 nC VDD = 480 V, ID = 1 A, VGS = 0 to 10 V 3
Gate-source charge Qgs 1.1 nC VDD = 480 V, ID = 1 A, VGS = 0 to 10 V 3
Gate-drain charge Qgd 3.7 nC VDD = 480 V, ID = 1 A, VGS = 0 to 10 V 3
Turn-on delay time td(on) 6.5 ns VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V 3
Rise time tr 5 ns VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V 3
Turn-off delay time td(off) 19 ns VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V 3
Fall time tf 25 ns VDD = 300 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V 3
Reverse recovery time trr 140 ns ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V 4
Reverse recovery charge Qrr 240 nC ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V 4
Reverse recovery current IRRM 3.3 A ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V 4
Reverse recovery time at TJ = 150 °C trr 229 ns ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C 4
Reverse recovery charge at TJ = 150 °C Qrr 377 nC ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C 4
Reverse recovery current at TJ = 150 °C IRRM 3.3 A ISD = 1.0 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C 4

CAD (KiCad official)

  • Symbol: STQ1HNK60R-AP
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: stq1hnk60r-ap-etched.step / stq1hnk60r-ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stq1hnk60r-ap.step / stq1hnk60r-ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 38fea8160a04f8e1, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF