component
STP6621
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STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp6621: specified limits as data (metadata.characteristics, 31 rows from the datasheet)
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STP6621
STANSON Tech · MOSFETs · SOP-8
STP6621 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, pin 1 at the dot-marked corner; continuous source (diode) current is rated -4.3 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A. |
| 4 | G | input | Gate of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of -0.8 V min to -2.5 V max at ID=-250 uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and pulsed drain current is -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -18 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current | ID | -11 | A | TJ=150℃, TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | -50 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | -4.3 | A | 2 | |||
| Power Dissipation | PD | 3.1 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 2 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 70 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V,ID=-250uA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -2.5 | -0.8 | V | VDS=VGS,ID=-250 uA | 3 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-48V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | uA | VDS=-48V,VGS=0V, TJ=85℃ | 3 | ||
| On-State Drain Current | ID(on) | -18 | A | VDS=-5V,VGS=10V | 3 | ||
| Drain-source On-Resistance | RDS(on) | 0.023 | 0.03 | Ω | VGS=-10V, ID=-10A | 3 | |
| Drain-source On-Resistance | RDS(on) | 0.028 | 0.038 | Ω | VGS=-4.5V, ID=-8A | 3 | |
| Forward Transconductance | gfs | 18 | S | VDS=-5V,ID=-6.7A | 3 | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-2.3A,VGS=0V | 3 | |
| Total Gate Charge | Qg | 47 | 55 | nC | VDS=-30V,VGS=-10 ID≡-6.2A | 3 | |
| Gate-Source Charge | Qgs | 9.2 | nC | 3 | |||
| Gate-Drain Charge | Qgd | 9.3 | nC | 3 | |||
| Input Capacitance | Ciss | 2410 | pF | VDS=-30V,VGS=0V f=1MHz | 3 | ||
| Output Capacitance | Coss | 179 | pF | 3 | |||
| Reverse Transfer Capacitance | Crss | 125 | pF | 3 | |||
| Turn-On Delay Time | td(on) | 9.8 | nS | VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω | 3 | ||
| Turn-On Rise Time | tr | 6.1 | nS | 3 | |||
| Turn-Off Delay Time | td(off) | 44 | nS | 3 | |||
| Turn-Off Fall Time | tf | 12.9 | nS | 3 |
CAD (KiCad official)
- Symbol:
STP6621 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stp6621-etched.step/stp6621-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp6621.step/stp6621.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (6 pp, sha256
05ed3cb9e51c6560, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STP6621
**STANSON Tech** · MOSFETs · SOP-8
STP6621 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, pin 1 at the dot-marked corner; continuous source (diode) current is rated -4.3 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A. |
| 4 | G | input | Gate of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of -0.8 V min to -2.5 V max at ID=-250 uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and pulsed drain current is -50 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -60 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | -18 | A | TJ=150℃, TA=25℃ | 2 |
| Continuous Drain Current | ID | | | -11 | A | TJ=150℃, TA=70℃ | 2 |
| Pulsed Drain Current | IDM | | | -50 | A | | 2 |
| Continuous Source Current (Diode Conduction) | IS | | | -4.3 | A | | 2 |
| Power Dissipation | PD | | | 3.1 | W | TA=25℃ | 2 |
| Power Dissipation | PD | | | 2 | W | TA=70℃ | 2 |
| Operation Junction Temperature | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance-Junction to Ambient | RθJA | | 70 | | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS=0V,ID=-250uA | 3 |
| Gate Threshold Voltage | VGS(th) | -2.5 | | -0.8 | V | VDS=VGS,ID=-250 uA | 3 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V,VGS=±20V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-48V,VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | uA | VDS=-48V,VGS=0V, TJ=85℃ | 3 |
| On-State Drain Current | ID(on) | -18 | | | A | VDS=-5V,VGS=10V | 3 |
| Drain-source On-Resistance | RDS(on) | | 0.023 | 0.03 | Ω | VGS=-10V, ID=-10A | 3 |
| Drain-source On-Resistance | RDS(on) | | 0.028 | 0.038 | Ω | VGS=-4.5V, ID=-8A | 3 |
| Forward Transconductance | gfs | | 18 | | S | VDS=-5V,ID=-6.7A | 3 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | IS=-2.3A,VGS=0V | 3 |
| Total Gate Charge | Qg | | 47 | 55 | nC | VDS=-30V,VGS=-10 ID≡-6.2A | 3 |
| Gate-Source Charge | Qgs | | 9.2 | | nC | | 3 |
| Gate-Drain Charge | Qgd | | 9.3 | | nC | | 3 |
| Input Capacitance | Ciss | | 2410 | | pF | VDS=-30V,VGS=0V f=1MHz | 3 |
| Output Capacitance | Coss | | 179 | | pF | | 3 |
| Reverse Transfer Capacitance | Crss | | 125 | | pF | | 3 |
| Turn-On Delay Time | td(on) | | 9.8 | | nS | VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω | 3 |
| Turn-On Rise Time | tr | | 6.1 | | nS | | 3 |
| Turn-Off Delay Time | td(off) | | 44 | | nS | | 3 |
| Turn-Off Fall Time | tf | | 12.9 | | nS | | 3 |
## CAD (KiCad official)
- Symbol: `STP6621`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `stp6621-etched.step` / `stp6621-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp6621.step` / `stp6621.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STANSON Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911261505490944) (6 pp, sha256 `05ed3cb9e51c6560`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stp6621-datasheet.pdf)