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STP6621

STANSON Tech · MOSFETs · SOP-8

STP6621 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, pin 1 at the dot-marked corner; continuous source (diode) current is rated -4.3 A.
2 S passive Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A.
3 S passive Source of the P-channel MOSFET, tied to the other source pins; continuous source (diode) current is rated -4.3 A.
4 G input Gate of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of -0.8 V min to -2.5 V max at ID=-250 uA.
5 D passive Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃.
6 D passive Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and continuous drain current is -18.0 A at TA=25℃.
8 D passive Drain of the P-channel MOSFET, tied to the other drain pins; VDSS is -60 V and pulsed drain current is -50 A.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID -18 A TJ=150℃, TA=25℃ 2
Continuous Drain Current ID -11 A TJ=150℃, TA=70℃ 2
Pulsed Drain Current IDM -50 A 2
Continuous Source Current (Diode Conduction) IS -4.3 A 2
Power Dissipation PD 3.1 W TA=25℃ 2
Power Dissipation PD 2 W TA=70℃ 2
Operation Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance-Junction to Ambient RθJA 70 ℃/W 2
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS=0V,ID=-250uA 3
Gate Threshold Voltage VGS(th) -2.5 -0.8 V VDS=VGS,ID=-250 uA 3
Gate Leakage Current IGSS -100 100 nA VDS=0V,VGS=±20V 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-48V,VGS=0V 3
Zero Gate Voltage Drain Current IDSS -10 uA VDS=-48V,VGS=0V, TJ=85℃ 3
On-State Drain Current ID(on) -18 A VDS=-5V,VGS=10V 3
Drain-source On-Resistance RDS(on) 0.023 0.03 Ω VGS=-10V, ID=-10A 3
Drain-source On-Resistance RDS(on) 0.028 0.038 Ω VGS=-4.5V, ID=-8A 3
Forward Transconductance gfs 18 S VDS=-5V,ID=-6.7A 3
Diode Forward Voltage VSD -0.7 -1 V IS=-2.3A,VGS=0V 3
Total Gate Charge Qg 47 55 nC VDS=-30V,VGS=-10 ID≡-6.2A 3
Gate-Source Charge Qgs 9.2 nC 3
Gate-Drain Charge Qgd 9.3 nC 3
Input Capacitance Ciss 2410 pF VDS=-30V,VGS=0V f=1MHz 3
Output Capacitance Coss 179 pF 3
Reverse Transfer Capacitance Crss 125 pF 3
Turn-On Delay Time td(on) 9.8 nS VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω 3
Turn-On Rise Time tr 6.1 nS 3
Turn-Off Delay Time td(off) 44 nS 3
Turn-Off Fall Time tf 12.9 nS 3

CAD (KiCad official)

  • Symbol: STP6621
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stp6621-etched.step / stp6621-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp6621.step / stp6621.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (6 pp, sha256 05ed3cb9e51c6560, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF