# STP65NF06

**STMicroelectronics** · MOSFETs · TO-220AB-3

STP65NF06 from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, controls the channel with standard-level drive and an absolute maximum VGS of ±20 V. |
| 2 | D | passive | Drain, connected to the metal tab (D(TAB)); VDSS is 60 V and continuous ID is 60 A at TC = 25°C. |
| 3 | S | passive | Source, the current return terminal of the N-channel MOSFET (continuous source-drain current 60 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID = 250µA, VGS =0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS = Max rating | 4 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS = Max rating,@125°C | 4 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS = ± 20V, VDS = 0 | 4 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 4 |
| Static drain-source on resistance | RDS(on) |  | 11.5 | 14 | mΩ | VGS = 10V, ID = 30A | 4 |
| Total gate charge | Qg |  | 54 | 75 | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 |
| Source-drain current | ISD |  |  | 60 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 240 | A |  | 5 |
| Forward on voltage | VSD |  |  | 1.5 | V | ISD = 60A, VGS = 0 | 5 |
| Drain-source voltage | VDS |  |  | 60 | V | VGS = 0 | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 60 | A | TC = 25°C | 3 |
| Drain current (continuous) | ID |  |  | 42 | A | TC = 100°C | 3 |
| Drain current (pulsed) | IDM |  |  | 240 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | Ptot |  |  | 110 | W | TC = 25°C | 3 |
| Derating factor |  |  | 0.73 |  | W/°C |  | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 10 | V/ns | ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX | 3 |
| Single pulse avalanche energy | EAS |  |  | 390 | mJ | Starting Tj = 25 °C, ID = 30A, VDD = 40V | 3 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 1.36 | °C/W | TO-220 | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W | TO-220 | 3 |
| Maximum lead temperature for soldering | Tl |  |  | 300 | °C/W | 10sec. 1.6mm from case | 3 |
| Forward transconductance | gfs |  | 50 |  | S | VDS= 25V, ID = 30A | 4 |
| Input capacitance | Ciss |  | 1700 |  | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 |
| Output capacitance | Coss |  | 400 |  | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 |
| Reverse transfer capacitance | Crss |  | 135 |  | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 |
| Turn-on delay time | td(on) |  | 15 |  | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 |
| Rise time | tr |  | 60 |  | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 |
| Turn-off delay time | td(off) |  | 40 |  | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 |
| Fall time | tf |  | 16 |  | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 |
| Gate-source charge | Qgs |  | 10 |  | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 |
| Gate-drain charge | Qgd |  | 20 |  | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 |
| Reverse recovery time | trr |  | 70 |  | ns | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 |
| Reverse recovery charge | Qrr |  | 150 |  | nC | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 |
| Reverse recovery current | IRRM |  | 4.4 |  | A | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 |

## CAD (KiCad official)

- Symbol: `STP65NF06`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `stp65nf06-etched.step` / `stp65nf06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp65nf06.step` / `stp65nf06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stp65nf06.pdf) (14 pp, sha256 `0f77aa9abcef626e`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp65nf06-datasheet.pdf)