component
STP65NF06
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STP65NF06
STMicroelectronics · MOSFETs · TO-220AB-3
STP65NF06 from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, controls the channel with standard-level drive and an absolute maximum VGS of ±20 V. |
| 2 | D | passive | Drain, connected to the metal tab (D(TAB)); VDSS is 60 V and continuous ID is 60 A at TC = 25°C. |
| 3 | S | passive | Source, the current return terminal of the N-channel MOSFET (continuous source-drain current 60 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250µA, VGS =0 | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = Max rating | 4 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS = Max rating,@125°C | 4 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS = ± 20V, VDS = 0 | 4 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 4 | |
| Static drain-source on resistance | RDS(on) | 11.5 | 14 | mΩ | VGS = 10V, ID = 30A | 4 | |
| Total gate charge | Qg | 54 | 75 | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 | |
| Source-drain current | ISD | 60 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 240 | A | 5 | |||
| Forward on voltage | VSD | 1.5 | V | ISD = 60A, VGS = 0 | 5 | ||
| Drain-source voltage | VDS | 60 | V | VGS = 0 | 3 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) | ID | 60 | A | TC = 25°C | 3 | ||
| Drain current (continuous) | ID | 42 | A | TC = 100°C | 3 | ||
| Drain current (pulsed) | IDM | 240 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | Ptot | 110 | W | TC = 25°C | 3 | ||
| Derating factor | 0.73 | W/°C | 3 | ||||
| Peak diode recovery voltage slope | dv/dt | 10 | V/ns | ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX | 3 | ||
| Single pulse avalanche energy | EAS | 390 | mJ | Starting Tj = 25 °C, ID = 30A, VDD = 40V | 3 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 1.36 | °C/W | TO-220 | 3 | ||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | TO-220 | 3 | ||
| Maximum lead temperature for soldering | Tl | 300 | °C/W | 10sec. 1.6mm from case | 3 | ||
| Forward transconductance | gfs | 50 | S | VDS= 25V, ID = 30A | 4 | ||
| Input capacitance | Ciss | 1700 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 | ||
| Output capacitance | Coss | 400 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 | ||
| Reverse transfer capacitance | Crss | 135 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 4 | ||
| Turn-on delay time | td(on) | 15 | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 | ||
| Rise time | tr | 60 | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 | ||
| Turn-off delay time | td(off) | 40 | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 | ||
| Fall time | tf | 16 | ns | VDD = 30V, ID = 30A, RG = 4.7Ω, VGS = 10V | 4 | ||
| Gate-source charge | Qgs | 10 | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 | ||
| Gate-drain charge | Qgd | 20 | nC | VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω | 4 | ||
| Reverse recovery time | trr | 70 | ns | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 | ||
| Reverse recovery charge | Qrr | 150 | nC | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 | ||
| Reverse recovery current | IRRM | 4.4 | A | ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C | 5 |
CAD (KiCad official)
- Symbol:
STP65NF06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
stp65nf06-etched.step/stp65nf06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp65nf06.step/stp65nf06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (14 pp, sha256
0f77aa9abcef626e, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).