STP4925-HXY

{
  "schema_version": 1,
  "type": "component",
  "slug": "stp4925-hxy",
  "title": "STP4925-HXY",
  "brief": "HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
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  "component": {
    "mpn": "STP4925-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/1050c1ad95d0f9aaa220e62d7cf734e5.pdf",
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      "lbr": "stp4925-hxy.lbr"
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    "distributor_links": {
      "lcsc": "C22367191"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T03:15:36Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source terminal of the first P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of the first P-channel MOSFET, with gate-source voltage limited to ±20 V."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source terminal of the second P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of the second P-channel MOSFET, with gate-source voltage limited to ±20 V."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of the second P-channel MOSFET, carrying up to -8.5 A continuous drain current."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of the second P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of the first P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of the first P-channel MOSFET, carrying up to -8.5 A continuous drain current."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The two pinout diagrams on page 1 disagree on gate placement. The labelled diagram reads S1 G1 S2 G2; The datasheet gives drain pin names (D1/D2) but does not state which individual drain pad is which i; The datasheet gives no per-pin functional descriptions beyond names and the device-level ratings. Pi"
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        "pages_sent": 6,
        "cost_usd": 0.0313,
        "at": "2026-10-29T03:15:20"
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        "pages": 6,
        "sha256": "5dd67d2ace31c707",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "checked": "2026-10-29",
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    "package_dims": {
      "package_code": "SOP-8",
      "source_page": 5,
      "D": {
        "nom_mm": 4.9,
        "range_mm": [
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          5
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      },
      "E1": {
        "nom_mm": 3.9,
        "range_mm": [
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      },
      "E": {
        "nom_mm": 6,
        "range_mm": [
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      "e": {
        "nom_mm": 1.27,
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      "A": {
        "nom_mm": 1.55,
        "range_mm": [
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      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "stp4925-hxy.step",
        "verdict": "PASS",
        "reasons": [
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        "by": "factory/package_fit.py"
      }
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOP-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "5dd67d2ace31c7076622e6089bbce1048611251f4038b0b50b275654e9d40b69",
      "rows": [
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "GS=0V , ID=-250uA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": -1,
          "typ": null,
          "max": -2.5,
          "conditions": "VGS=VDS , ID=-250uA",
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          "source": "datasheet"
        },
        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "VDS=-24V , VGS=0V , TJ=25℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": -5,
          "conditions": "VDS=-24V , VGS=0V , TJ=55℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V , VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Source Current",
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          "conditions": "VG=VD=0V , Force Current",
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        },
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          "min": null,
          "typ": null,
          "max": -26,
          "conditions": "",
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        },
        {
          "name": "Diode Forward Voltage",
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          "typ": null,
          "max": -1.2,
          "conditions": "VGS=0V , IS=-1A , TJ=25℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": -30,
          "conditions": "TA=25°C unless otherwise noted",
          "source_page": 1,
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        },
        {
          "name": "Gate-Source Voltage",
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          "conditions": "TA=25°C unless otherwise noted",
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        {
          "name": "Drain Current-Continuous",
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          "unit": "A",
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          "max": -8.5,
          "conditions": "TA=25°C unless otherwise noted",
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          "source_page": 1,
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          "name": "Maximum Power Dissipation",
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          "unit": "W",
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          "max": 1.5,
          "conditions": "TA=25°C unless otherwise noted",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "TA=25°C unless otherwise noted",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 85,
          "conditions": "Note 2 as printed on table",
          "source_page": 1,
          "source": "datasheet"
        }
      ]
    }
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