component
STP4925-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP4925-HXY
HXY MOSFET · MOSFETs · SOP-8
STP4925-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage. |
| 2 | G1 | input | Gate of the first P-channel MOSFET, with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage. |
| 4 | G2 | input | Gate of the second P-channel MOSFET, with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET, carrying up to -8.5 A continuous drain current. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET, carrying up to -8.5 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | GS=0V , ID=-250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS , ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -6.5 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -26 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | -8.5 | A | TA=25°C unless otherwise noted | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | -26 | A | TA=25°C unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA=25°C unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | TA=25°C unless otherwise noted | 1 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 85 | ℃/W | Note 2 as printed on table | 1 |
CAD (KiCad official)
- Symbol:
STP4925-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stp4925-hxy-etched.step/stp4925-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp4925-hxy.step/stp4925-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
5dd67d2ace31c707, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).