# STP4925-HXY

**HXY MOSFET** · MOSFETs · SOP-8

STP4925-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage. |
| 2 | G1 | input | Gate of the first P-channel MOSFET, with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET in the dual package, rated for a -30 V drain-source voltage. |
| 4 | G2 | input | Gate of the second P-channel MOSFET, with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET, carrying up to -8.5 A continuous drain current. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (second pin of the same drain), carrying up to -8.5 A continuous drain current. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET, carrying up to -8.5 A continuous drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | GS=0V , ID=-250uA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS , ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -6.5 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -26 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Drain Current-Continuous | ID |  |  | -8.5 | A | TA=25°C unless otherwise noted | 1 |
| Drain Current-Pulsed (Note 1) | IDM |  |  | -26 | A | TA=25°C unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TA=25°C unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ | TA=25°C unless otherwise noted | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 85 | ℃/W | Note 2 as printed on table | 1 |

## CAD (KiCad official)

- Symbol: `STP4925-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `stp4925-hxy-etched.step` / `stp4925-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp4925-hxy.step` / `stp4925-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/stp4925-hxy-datasheet.pdf) (6 pp, sha256 `5dd67d2ace31c707`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp4925-hxy-datasheet.pdf)