STP26NM60N

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  "title": "STP26NM60N",
  "brief": "STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "subcategory": "MOSFETs",
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal: control input with ±30 V absolute maximum gate-source voltage and 2-4 V gate threshold voltage for switching control."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal: 600 V maximum drain-source voltage, 20 A continuous current at TC=25°C (12.6 A at TC=100°C), with 80 A pulsed rating and 135 mΩ typical on-resistance at VGS=10V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "power_in",
        "description": "Source terminal: reference electrode for gate-source voltage and return path for drain current through drain-source channel and body diode."
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [],
        "pages_sent": 16,
        "cost_usd": 0.1255,
        "at": "2026-09-23T00:36:48"
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        "pages": 16,
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        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
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          "name": "Drain-source voltage",
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          "max": 600,
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        {
          "name": "Gate-source voltage",
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          "min": -30,
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          "max": 30,
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        {
          "name": "Drain current (continuous) at TC = 25 °C",
          "symbol": "ID",
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          "symbol": "IDM",
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          "name": "Total power dissipation",
          "symbol": "PTOT",
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          "conditions": "TC = 25 °C",
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        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "ISD ≤ 20 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 480 V",
          "source_page": 2,
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        },
        {
          "name": "Storage temperature range",
          "symbol": "Tstg",
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          "unit": "°C",
          "min": -55,
          "typ": null,
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        },
        {
          "name": "Avalanche current, repetitive or not-repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
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        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
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          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",
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        },
        {
          "name": "Thermal resistance, junction-to-case",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.89,
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        },
        {
          "name": "Thermal resistance, junction-to-ambient (TO-220)",
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          "kind": "thermal",
          "unit": "°C/W",
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        },
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          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": null,
          "conditions": "ID = 1 mA, VGS = 0 V",
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        },
        {
          "name": "Zero gate voltage drain current",
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          "conditions": "VGS = 0 V, VDS = 600 V",
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        },
        {
          "name": "Zero gate voltage drain current at TC = 125 °C",
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          "kind": "electrical",
          "unit": "µA",
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          "typ": null,
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          "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production)",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0 V, VGS = ±30 V",
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          "source": "datasheet"
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        {
          "name": "Gate threshold voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS = VGS, ID = 250 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on resistance",
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          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 135,
          "max": 165,
          "conditions": "VGS = 10 V, ID = 10 A",
          "source_page": 3,
          "source": "datasheet"
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          "name": "Forward on voltage",
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          "conditions": "ISD = 20 A, VGS = 0 V (pulsed: pulse duration = 300 μs, duty cycle 1.5%)",
          "source_page": 4,
          "source": "datasheet"
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  "updated_at": "2026-09-25T09:05:04.855Z"
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