component
STP26NM60N
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP26NM60N
STMicroelectronics · MOSFETs · TO-220
STP26NM60N from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal: control input with ±30 V absolute maximum gate-source voltage and 2-4 V gate threshold voltage for switching control. |
| 2 | D | passive | Drain terminal: 600 V maximum drain-source voltage, 20 A continuous current at TC=25°C (12.6 A at TC=100°C), with 80 A pulsed rating and 135 mΩ typical on-resistance at VGS=10V. |
| 3 | S | power_in | Source terminal: reference electrode for gate-source voltage and return path for drain current through drain-source channel and body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 600 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 20 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 12.6 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 80 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 140 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | ISD ≤ 20 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 480 V | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not-repetitive | IAR | 6 | A | Pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 610 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 0.89 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient (TO-220) | RthJA | 62.5 | °C/W | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) | 3 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±30 V | 3 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on resistance | RDS(on) | 135 | 165 | mΩ | VGS = 10 V, ID = 10 A | 3 | |
| Source-drain current | ISD | 20 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 80 | A | Pulse width limited by safe operating area | 4 | ||
| Forward on voltage | VSD | 1.5 | V | ISD = 20 A, VGS = 0 V (pulsed: pulse duration = 300 μs, duty cycle 1.5%) | 4 |
CAD (KiCad official)
- Symbol:
STP26NM60N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp26nm60n-etched.step/stp26nm60n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp26nm60n.step/stp26nm60n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (16 pp, sha256
3ba6c1bea249b8fd, retrieved 2026-09-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).