STP23N80K5

{
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  "type": "component",
  "slug": "stp23n80k5",
  "title": "STP23N80K5",
  "brief": "STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
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  "component": {
    "mpn": "STP23N80K5",
    "manufacturer": "STMicroelectronics",
    "package": "TO-220",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897070199812096",
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    "distributor_links": {
      "lcsc": "C2688569",
      "digikey": "497-16319-5-ND",
      "mouser": "511-STP23N80K5"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-16319-5-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "511-STP23N80K5",
        "status": "found"
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    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; Zener-protected with gate-source breakdown V(BR)GSO of ±30 V min and absolute maximum VGS of ±30 V, threshold 3 to 5 V at ID = 100 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain (also connected to the TAB); V(BR)DSS 800 V min, continuous drain current 16 A at Tcase = 25 °C and 64 A pulsed."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; carries the source-drain body diode current of 16 A continuous and 64 A pulsed."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The TAB is not a numbered pin in the package outline. It is listed as a fourth entry tied to drain (",
          "dropped thermal pad ['EP'] absent from footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 13,
        "cost_usd": 0.2419,
        "at": "2026-10-10T21:58:40"
      },
      "datasheet": {
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        "pages": 13,
        "sha256": "6696bcc3f946d5df",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.25,
          4.455,
          28.525
        ],
        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
        "sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
        "checked": "2026-10-10",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "fbfdb2cd215cf2af8b8a644c321dde165322308be9df0857e084606de8a877d9",
        "checked": "2026-10-10",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "6696bcc3f946d5df",
      "rows": [
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 800,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 1 mA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0 V, VDS = 800 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current (Tcase = 125 °C)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VGS = 0 V, VDS = 800 V, Tcase = 125 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 0 V, VGS = ±20 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 3,
          "typ": 4,
          "max": 5,
          "conditions": "VDS = VGS, ID = 100 µA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 0.23,
          "max": 0.28,
          "conditions": "VGS = 10 V, ID = 8 A",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-source breakdown voltage",
          "symbol": "V(BR)GSO",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "IGS = ±1 mA, ID = 0 A",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current",
          "symbol": "ISD",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 16,
          "conditions": "",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current (pulsed)",
          "symbol": "ISDM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 64,
          "conditions": "",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
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          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 16,
          "conditions": "Tcase = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "Tcase = 100 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 64,
          "conditions": "Pulse width is limited by safe operating area",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Total dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 190,
          "conditions": "Tcase = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt(2)",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4.5,
          "conditions": "ISD ≤ 16 A, di/dt = 100 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt(3)",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS ≤ 640 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction-case",
          "symbol": "Rthj-case",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.66,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction-ambient",
          "symbol": "Rthj-amb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive or not repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "Pulse width limited by Tjmax",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 400,
          "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_pitch": "STP23N80K5 (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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