component
STP23N80K5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp23n80k5: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ STP23N80K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 800 | | | V | VGS = 0 V, ID = 1 mA | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 800 V | 4 |+| Zero gate voltage drain current (Tcase = 125 °C) | IDSS | | | 50 | µA | VGS = 0 V, VDS = 800 V, Tcase = 125 °C | 4 |+| Gate-body leakage current | IGSS | -10 | | 10 | µA | VDS = 0 V, VGS = ±20 V | 4 |+| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 0.23 | 0.28 | Ω | VGS = 10 V, ID = 8 A | 4 |+| Gate-source breakdown voltage | V(BR)GSO | -30 | | | V | IGS = ±1 mA, ID = 0 A | 5 |+| Source-drain current | ISD | | | 16 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 64 | A | | 5 |+| Gate-source voltage | VGS | -30 | | 30 | V | | 3 |+| Drain current (continuous) | ID | | | 16 | A | Tcase = 25 °C | 3 |+| Drain current (continuous) | ID | | | 10 | A | Tcase = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 64 | A | Pulse width is limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 190 | W | Tcase = 25 °C | 3 |+| Peak diode recovery voltage slope | dv/dt(2) | | | 4.5 | V/ns | ISD ≤ 16 A, di/dt = 100 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS | 3 |+| MOSFET dv/dt ruggedness | dv/dt(3) | | | 50 | V/ns | VDS ≤ 640 V | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Thermal resistance junction-case | Rthj-case | | | 0.66 | °C/W | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 30 | °C/W | | 3 |+| Avalanche current, repetitive or not repetitive | IAR | | | 5 | A | Pulse width limited by Tjmax | 3 |+| Single pulse avalanche energy | EAS | | | 400 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 |+ ## CAD (KiCad official) - Symbol: `STP23N80K5`
page.json+260−1@@ -152,6 +152,265 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6696bcc3f946d5df",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 800,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 800 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (Tcase = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 800 V, Tcase = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "VDS = VGS, ID = 100 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.23,+ "max": 0.28,+ "conditions": "VGS = 10 V, ID = 8 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source breakdown voltage",+ "symbol": "V(BR)GSO",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "IGS = ±1 mA, ID = 0 A",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 64,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Tcase = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "Tcase = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 64,+ "conditions": "Pulse width is limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 190,+ "conditions": "Tcase = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt(2)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "ISD ≤ 16 A, di/dt = 100 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt(3)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 640 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.66,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Pulse width limited by Tjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 400,+ "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -193,4 +452,4 @@ "visibility": { "public": true }-}+}