# STP23N80K5

**STMicroelectronics** · MOSFETs · TO-220

STP23N80K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; Zener-protected with gate-source breakdown V(BR)GSO of ±30 V min and absolute maximum VGS of ±30 V, threshold 3 to 5 V at ID = 100 µA. |
| 2 | D | passive | Drain (also connected to the TAB); V(BR)DSS 800 V min, continuous drain current 16 A at Tcase = 25 °C and 64 A pulsed. |
| 3 | S | passive | Source; carries the source-drain body diode current of 16 A continuous and 64 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 |  |  | V | VGS = 0 V, ID = 1 mA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 800 V | 4 |
| Zero gate voltage drain current (Tcase = 125 °C) | IDSS |  |  | 50 | µA | VGS = 0 V, VDS = 800 V, Tcase = 125 °C | 4 |
| Gate-body leakage current | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ±20 V | 4 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 0.23 | 0.28 | Ω | VGS = 10 V, ID = 8 A | 4 |
| Gate-source breakdown voltage | V(BR)GSO | -30 |  |  | V | IGS = ±1 mA, ID = 0 A | 5 |
| Source-drain current | ISD |  |  | 16 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 64 | A |  | 5 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 16 | A | Tcase = 25 °C | 3 |
| Drain current (continuous) | ID |  |  | 10 | A | Tcase = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 64 | A | Pulse width is limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 190 | W | Tcase = 25 °C | 3 |
| Peak diode recovery voltage slope | dv/dt(2) |  |  | 4.5 | V/ns | ISD ≤ 16 A, di/dt = 100 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS | 3 |
| MOSFET dv/dt ruggedness | dv/dt(3) |  |  | 50 | V/ns | VDS ≤ 640 V | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 0.66 | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 30 | °C/W |  | 3 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 5 | A | Pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS |  |  | 400 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 |

## CAD (KiCad official)

- Symbol: `STP23N80K5`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stp23n80k5-etched.step` / `stp23n80k5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp23n80k5.step` / `stp23n80k5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897070199812096) (13 pp, sha256 `6696bcc3f946d5df`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp23n80k5-datasheet.pdf)