# STP13N60M2

**STMicroelectronics** · MOSFETs · TO-220

STP13N60M2 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; Zener-protected, gate-source voltage limited to ±25 V with gate threshold of 2 to 4 V. |
| 2 | D | passive | Drain, also connected to the TAB; 600 V minimum drain-source breakdown and 11 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source; connected to the body diode anode, with 11 A maximum continuous source-drain diode current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 3 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 11 | A | TC = 25 °C | 3 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 7 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 44 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation at TC = 25 °C | PTOT |  |  | 110 | W | TC = 25 °C | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS ≤ 480 V | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) | IAR |  |  | 2.8 | A | Pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS |  |  | 125 | mJ | Starting Tj=25°C, ID=IAR; VDD=50 | 3 |
| Thermal resistance junction-case max | Rthj-case |  |  | 1.14 | °C/W |  | 3 |
| Thermal resistance junction-ambient max (TO-220) | Rthj-amb |  |  | 62.5 | °C/W | TO-220 package column | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 1 mA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS = 600 V, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | μA | VDS = 600 V, TC=125 °C | 4 |
| Gate-body leakage current | IGSS | -10 |  | 10 | μA | VGS = ± 25 V, VDS = 0 | 4 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 μA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 0.35 | 0.38 | Ω | VGS = 10 V, ID = 5.5 A | 4 |
| Source-drain current | ISD |  |  | 11 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 44 | A | Pulse width limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.6 | V | ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 μs, duty cycle 1.5% | 5 |

## CAD (KiCad official)

- Symbol: `STP13N60M2`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stp13n60m2-etched.step` / `stp13n60m2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp13n60m2.step` / `stp13n60m2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590891399590604800) (18 pp, sha256 `90551637d6e826b8`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp13n60m2-datasheet.pdf)