component
STP13N60M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp13n60m2: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ STP13N60M2 from STMicroelectronics, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -25 | | 25 | V | | 3 |+| Drain current (continuous) at TC = 25 °C | ID | | | 11 | A | TC = 25 °C | 3 |+| Drain current (continuous) at TC = 100 °C | ID | | | 7 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 44 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation at TC = 25 °C | PTOT | | | 110 | W | TC = 25 °C | 3 |+| Peak diode recovery voltage slope | dv/dt | | | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V | 3 |+| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | VDS ≤ 480 V | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) | IAR | | | 2.8 | A | Pulse width limited by Tjmax | 3 |+| Single pulse avalanche energy | EAS | | | 125 | mJ | Starting Tj=25°C, ID=IAR; VDD=50 | 3 |+| Thermal resistance junction-case max | Rthj-case | | | 1.14 | °C/W | | 3 |+| Thermal resistance junction-ambient max (TO-220) | Rthj-amb | | | 62.5 | °C/W | TO-220 package column | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | ID = 1 mA, VGS = 0 | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 600 V, VGS = 0 | 4 |+| Zero gate voltage drain current | IDSS | | | 100 | μA | VDS = 600 V, TC=125 °C | 4 |+| Gate-body leakage current | IGSS | -10 | | 10 | μA | VGS = ± 25 V, VDS = 0 | 4 |+| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 μA | 4 |+| Static drain-source on-resistance | RDS(on) | | 0.35 | 0.38 | Ω | VGS = 10 V, ID = 5.5 A | 4 |+| Source-drain current | ISD | | | 11 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 44 | A | Pulse width limited by safe operating area | 5 |+| Forward on voltage | VSD | | | 1.6 | V | ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 μs, duty cycle 1.5% | 5 |+ ## CAD (KiCad official) - Symbol: `STP13N60M2`
page.json+260−1@@ -152,6 +152,265 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "90551637d6e826b8",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 480 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "Pulse width limited by Tjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "Starting Tj=25°C, ID=IAR; VDD=50",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case max",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.14,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient max (TO-220)",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "TO-220 package column",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "ID = 1 mA, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 600 V, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 600 V, TC=125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "μA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ± 25 V, VDS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.35,+ "max": 0.38,+ "conditions": "VGS = 10 V, ID = 5.5 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 μs, duty cycle 1.5%",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -193,4 +452,4 @@ "visibility": { "public": true }-}+}