# STP10N95K5

**STMicroelectronics** · MOSFETs · TO-220

STP10N95K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; the datasheet rates the gate-source voltage at ±30 V. |
| 2 | D | passive | Drain of the MOSFET, also connected to the TAB; the datasheet rates drain-source breakdown voltage V(BR)DSS at 950 V and continuous drain current at 8 A at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET; the datasheet gives the gate-source voltage rating of ±30 V and the source-drain diode forward voltage of 1.5 V at 8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 8 | A | TC = 25 °C | 2 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 5 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 32 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation at TC = 25 °C | PTOT |  |  | 130 | W | TC = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt |  |  | 4.5 | V/ns | ISD ≤ 8 A, di/dt ≤ 100 A/µs, VDS (peak) < V(BR)DSS | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDD ≤ 760 V | 2 |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO |  |  | 2.5 | kV | t = 1 s; TC = 25 °C | 2 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 2 |
| Thermal resistance, junction-to-case | RthJC |  | 0.96 |  | °C/W |  | 2 |
| Thermal resistance, junction-to-ambient (TO-220) | RthJA |  |  | 62.5 | °C/W |  | 2 |
| Avalanche current, repetitive or non-repetitive | IAR |  |  | 2.5 | A | Pulse width limited by TJ max. | 2 |
| Single pulse avalanche energy | EAS |  |  | 122 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 950 |  |  | V | ID = 1 mA, VGS = 0 V | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 950 V | 3 |
| Zero gate voltage drain current at TC = 125 °C | IDSS |  |  | 50 | µA | VGS = 0 V, VDS = 950 V, TC = 125 °C | 3 |
| Gate body leakage current | IGSS | -10 |  | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 650 | 800 | mΩ | VGS = 10 V, ID = 4 A | 3 |
| Input capacitance | Ciss |  | 630 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |
| Output capacitance | Coss |  | 50 |  | pF |  | 3 |
| Reverse transfer capacitance | Crss |  | 0.6 |  | pF |  | 3 |
| Equivalent capacitance time related | Co(tr) |  | 77 |  | pF | VDS = 0 to 760 V, VGS = 0 V | 3 |
| Equivalent capacitance energy related | Co(er) |  | 28 |  | pF |  | 3 |
| Gate input resistance | Rg |  | 6.5 |  | Ω | f = 1 MHz, ID = 0 A | 3 |
| Total gate charge | Qg |  | 22 |  | nC | VDD = 760 V, ID = 8 A, VGS = 0 to 10 V | 3 |
| Gate-source charge | Qgs |  | 5 |  | nC |  | 3 |
| Gate-drain charge | Qgd |  | 15 |  | nC |  | 3 |
| Turn-on delay time | td(on) |  | 22 |  | ns | VDD = 475 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Rise time | tr |  | 14 |  | ns |  | 3 |
| Turn-off delay time | td(off) |  | 51 |  | ns |  | 3 |
| Fall time | tf |  | 15 |  | ns |  | 3 |
| Source-drain current | ISD |  |  | 8 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 32 | A |  | 4 |
| Forward on voltage | VSD |  |  | 1.5 | V | ISD = 8 A, VGS = 0 V | 4 |
| Reverse recovery time | trr |  |  | 404 | ns | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery charge | Qrr |  |  | 5.2 | µC |  | 4 |
| Reverse recovery current | IRRM |  |  | 25.5 | A |  | 4 |
| Reverse recovery time at TJ = 150 °C | trr |  |  | 596 | ns | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |
| Reverse recovery charge at TJ = 150 °C | Qrr |  |  | 6.9 | µC |  | 4 |
| Reverse recovery current at TJ = 150 °C | IRRM |  |  | 23 | A |  | 4 |

## CAD (KiCad official)

- Symbol: `STP10N95K5`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stp10n95k5-etched.step` / `stp10n95k5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp10n95k5.step` / `stp10n95k5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stp10n95k5.pdf) (22 pp, sha256 `4ea0ef302a1271a7`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp10n95k5-datasheet.pdf)