component

STP10N95K5

Public Made by Adom

by adom

STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstp10n95k5factory-2.0.0extractor-text

Verified STP10N95K5

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STP10N95K5 · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 22-page datasheet
  • ✓distributor: lcsc C472613, digikey 497-14568-5-ND, mouser 511-STP10N95K5
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-co2wtguo/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stp10n95k5.kicad_sym✓ stp10n95k5.kicad_mod✓ stp10n95k5.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 20h ago
viewers stp10n95k5: viewers · Ray 20h ago
package.json Publish 0.1.0 · Ray 20h ago
page.json Set visibility: public · Ray 20h ago
README.md Publish 0.1.0 · Ray 20h ago
stp10n95k5-etched.glb Publish 0.1.0 · Ray 20h ago
stp10n95k5-etched.step stp10n95k5: factory component page (tier=mfr) · Ray 20h ago
stp10n95k5-hero.glb stp10n95k5: hero GLB from the etched model (keeps the MPN mark) · Ray 20h ago
stp10n95k5-hero.overlay.json Publish 0.1.0 · Ray 20h ago
stp10n95k5.glb Publish 0.1.0 · Ray 20h ago
stp10n95k5.kicad_mod Publish 0.1.0 · Ray 20h ago
stp10n95k5.kicad_sym Publish 0.1.0 · Ray 20h ago
stp10n95k5.lbr Publish 0.1.0 · Ray 20h ago
stp10n95k5.step Publish 0.1.0 · Ray 20h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 20h ago

STP10N95K5

STMicroelectronics · MOSFETs · TO-220

STP10N95K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the datasheet rates the gate-source voltage at ±30 V.
2 D passive Drain of the MOSFET, also connected to the TAB; the datasheet rates drain-source breakdown voltage V(BR)DSS at 950 V and continuous drain current at 8 A at TC = 25 °C.
3 S passive Source of the MOSFET; the datasheet gives the gate-source voltage rating of ±30 V and the source-drain diode forward voltage of 1.5 V at 8 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) at TC = 25 °C ID 8 A TC = 25 °C 2
Drain current (continuous) at TC = 100 °C ID 5 A TC = 100 °C 2
Drain current (pulsed) IDM 32 A Pulse width limited by safe operating area 2
Total power dissipation at TC = 25 °C PTOT 130 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns ISD ≤ 8 A, di/dt ≤ 100 A/µs, VDS (peak) < V(BR)DSS 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDD ≤ 760 V 2
Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 2.5 kV t = 1 s; TC = 25 °C 2
Operating junction temperature range TJ -55 150 °C 2
Thermal resistance, junction-to-case RthJC 0.96 °C/W 2
Thermal resistance, junction-to-ambient (TO-220) RthJA 62.5 °C/W 2
Avalanche current, repetitive or non-repetitive IAR 2.5 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 122 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 950 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 950 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 50 µA VGS = 0 V, VDS = 950 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 100 µA 3
Static drain-source on-resistance RDS(on) 650 800 mΩ VGS = 10 V, ID = 4 A 3
Input capacitance Ciss 630 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 3
Output capacitance Coss 50 pF 3
Reverse transfer capacitance Crss 0.6 pF 3
Equivalent capacitance time related Co(tr) 77 pF VDS = 0 to 760 V, VGS = 0 V 3
Equivalent capacitance energy related Co(er) 28 pF 3
Gate input resistance Rg 6.5 Ω f = 1 MHz, ID = 0 A 3
Total gate charge Qg 22 nC VDD = 760 V, ID = 8 A, VGS = 0 to 10 V 3
Gate-source charge Qgs 5 nC 3
Gate-drain charge Qgd 15 nC 3
Turn-on delay time td(on) 22 ns VDD = 475 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V 3
Rise time tr 14 ns 3
Turn-off delay time td(off) 51 ns 3
Fall time tf 15 ns 3
Source-drain current ISD 8 A 4
Source-drain current (pulsed) ISDM 32 A 4
Forward on voltage VSD 1.5 V ISD = 8 A, VGS = 0 V 4
Reverse recovery time trr 404 ns ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery charge Qrr 5.2 µC 4
Reverse recovery current IRRM 25.5 A 4
Reverse recovery time at TJ = 150 °C trr 596 ns ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery charge at TJ = 150 °C Qrr 6.9 µC 4
Reverse recovery current at TJ = 150 °C IRRM 23 A 4

CAD (KiCad official)

  • Symbol: STP10N95K5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp10n95k5-etched.step / stp10n95k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp10n95k5.step / stp10n95k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (22 pp, sha256 4ea0ef302a1271a7, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF