STP100NF04

{
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  "type": "component",
  "slug": "stp100nf04",
  "title": "STP100NF04",
  "brief": "STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "STP100NF04",
    "manufacturer": "STMicroelectronics",
    "package": "TO-220",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603058587426177024",
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      "lbr": "stp100nf04.lbr"
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    "distributor_links": {
      "lcsc": "C2971275",
      "digikey": "497-7497-5-ND",
      "mouser": "511-STP100NF04"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-7497-5-ND",
        "status": "found",
        "lifecycle": "Active"
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      "mouser": {
        "pn": "511-STP100NF04",
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        "lifecycle": "Obsolete"
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    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal; gate-source voltage VGS is limited to ±20 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the TAB; drain-source voltage VDS is limited to 40 V and continuous drain current is 120 A at TC = 25 °C (current limited by package)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal; source-drain current ISD is rated at 120 A continuous and 480 A pulsed."
      }
    ],
    "provenance": {
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The TO-220 pin-to-function mapping is taken from the device symbol labels in Figure 1 / the package-; The TAB is printed as 'TAB' rather than a numbered pin and is shown as drain (D(2, TAB)). It is fold; Pin types 'passive' for D and S are KiCad classes chosen for MOSFET terminals, since the datasheet d"
        ],
        "pages_sent": 20,
        "cost_usd": 0.033,
        "at": "2026-10-11T18:36:49"
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      "datasheet": {
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        "pages": 20,
        "sha256": "86cfaab86fe21696",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
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        "extents_mm": [
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        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
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  "metadata": {
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      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
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          "typ": null,
          "max": null,
          "conditions": "ID = 250 µA, VGS = 0 V",
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        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
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          "typ": null,
          "max": 1,
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          "name": "Zero gate voltage drain current (TC = 125°C)",
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        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
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        {
          "name": "Static drain-source on-resistance",
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        {
          "name": "Source-drain current",
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        {
          "name": "Input capacitance",
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          "kind": "electrical",
          "unit": "pF",
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        {
          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
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          "typ": 1300,
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          "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0 V",
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        {
          "name": "Reverse transfer capacitance",
          "symbol": "Crss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 160,
          "max": null,
          "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0 V",
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        },
        {
          "name": "Total gate charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
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          "typ": 110,
          "max": 150,
          "conditions": "VDD = 32 V, ID = 120 A, VGS = 10 V",
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        {
          "name": "Gate-source charge",
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          "kind": "electrical",
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          "typ": 35,
          "max": null,
          "conditions": "VDD = 32 V, ID = 120 A, VGS = 10 V",
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        {
          "name": "Turn-on delay time",
          "symbol": "td(on)",
          "kind": "electrical",
          "unit": "ns",
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          "typ": 35,
          "max": null,
          "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",
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          "name": "Rise time",
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          "kind": "electrical",
          "unit": "ns",
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          "typ": 220,
          "max": null,
          "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",
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          "name": "Turn-off delay time",
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          "min": null,
          "typ": 80,
          "max": null,
          "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",
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          "name": "Fall time",
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          "min": null,
          "typ": 50,
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          "name": "Forward on voltage",
          "symbol": "VSD",
          "kind": "electrical",
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          "min": null,
          "typ": 1.3,
          "max": null,
          "conditions": "ISD = 120 A, VGS = 0 V",
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          "name": "Reverse recovery time",
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          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 75,
          "max": null,
          "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",
          "source_page": 5,
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        {
          "name": "Reverse recovery charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 185,
          "max": null,
          "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",
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        {
          "name": "Reverse recovery current",
          "symbol": "tf",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": 5,
          "max": null,
          "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",
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        {
          "name": "Drain-source voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 3,
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        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
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        {
          "name": "Drain current (continuous)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 120,
          "conditions": "TC = 25°C; current limited by package",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 480,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Total dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "TC = 25°C",
          "source_page": 3,
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        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 6,
          "conditions": "ISD ≤ 120 A, di/dt ≤ 300 A/µs, VDD = V(BR)DSS, Tj ≤ TJMAX",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
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          "unit": "J",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "Starting Tj = 25 °C, ID = 60 A, VDD = 30 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature range",
          "symbol": "Tj",
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          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
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        },
        {
          "name": "Thermal resistance junction-case",
          "symbol": "Rthj-case",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 0.5,
          "max": null,
          "conditions": "",
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        },
        {
          "name": "Thermal resistance junction-pcb",
          "symbol": "Rthj-pcb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 35,
          "max": null,
          "conditions": "Mounted on a 1-inch² FR-4 board, 2oz Cu",
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        {
          "name": "Thermal resistance junction-ambient",
          "symbol": "Rthj-amb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 62.5,
          "max": null,
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          "source_page": 3,
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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