component
STP100NF04
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp100nf04: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+444−1
README.md+40@@ -21,6 +21,46 @@ STP100NF04 from STMicroelectronics, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 40 | | | V | ID = 250 µA, VGS = 0 V | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 40 V, VGS = 0 V | 4 |+| Zero gate voltage drain current (TC = 125°C) | IDSS | | | 10 | µA | VDS = 40 V, VGS = 0 V, TC = 125°C | 4 |+| Gate body leakage current | IGSS | -100 | | 100 | nA | VGS = ±20 V, VDS = 0 V | 4 |+| Gate threshold voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 4.3 | 4.6 | mΩ | VGS = 10 V, ID = 50 A | 4 |+| Source-drain current | ISD | | | 120 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 480 | A | Pulse width limited by safe operating area | 5 |+| Input capacitance | Ciss | | 5100 | | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 4 |+| Output capacitance | Coss | | 1300 | | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 4 |+| Reverse transfer capacitance | Crss | | 160 | | pF | VDS = 25 V, f = 1 MHz, VGS = 0 V | 4 |+| Total gate charge | Qg | | 110 | 150 | nC | VDD = 32 V, ID = 120 A, VGS = 10 V | 4 |+| Gate-source charge | Qgs | | 35 | | nC | VDD = 32 V, ID = 120 A, VGS = 10 V | 4 |+| Gate-drain charge | Qgd | | 70 | | nC | VDD = 32 V, ID = 120 A, VGS = 10 V | 4 |+| Turn-on delay time | td(on) | | 35 | | ns | VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Rise time | tr | | 220 | | ns | VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Turn-off delay time | td(off) | | 80 | | ns | VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Fall time | tf | | 50 | | ns | VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Forward on voltage | VSD | | 1.3 | | V | ISD = 120 A, VGS = 0 V | 5 |+| Reverse recovery time | tr | | 75 | | ns | ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C | 5 |+| Reverse recovery charge | td(off) | | 185 | | nC | ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C | 5 |+| Reverse recovery current | tf | | 5 | | A | ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C | 5 |+| Drain-source voltage | VDS | | | 40 | V | | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 3 |+| Drain current (continuous) | ID | | | 120 | A | TC = 25°C; current limited by package | 3 |+| Drain current (pulsed) | IDM | | | 480 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 300 | W | TC = 25°C | 3 |+| Peak diode recovery voltage slope | dv/dt | | | 6 | V/ns | ISD ≤ 120 A, di/dt ≤ 300 A/µs, VDD = V(BR)DSS, Tj ≤ TJMAX | 3 |+| Single pulse avalanche energy | EAS | | | 1.2 | J | Starting Tj = 25 °C, ID = 60 A, VDD = 30 V | 3 |+| Operating junction temperature range | Tj | -55 | | 175 | °C | | 3 |+| Thermal resistance junction-case | Rthj-case | | 0.5 | | °C/W | | 3 |+| Thermal resistance junction-pcb | Rthj-pcb | | 35 | | °C/W | Mounted on a 1-inch² FR-4 board, 2oz Cu | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | 62.5 | | °C/W | | 3 |+ ## CAD (KiCad official) - Symbol: `STP100NF04`
page.json+404−1@@ -151,6 +151,409 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "86cfaab86fe21696",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 40 V, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125°C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 40 V, VGS = 0 V, TC = 125°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.3,+ "max": 4.6,+ "conditions": "VGS = 10 V, ID = 50 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 480,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 5100,+ "max": null,+ "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1300,+ "max": null,+ "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 160,+ "max": null,+ "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 110,+ "max": 150,+ "conditions": "VDD = 32 V, ID = 120 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "VDD = 32 V, ID = 120 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "VDD = 32 V, ID = 120 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 220,+ "max": null,+ "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 80,+ "max": null,+ "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.3,+ "max": null,+ "conditions": "ISD = 120 A, VGS = 0 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 75,+ "max": null,+ "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 185,+ "max": null,+ "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "ISD = 120 A, VDD = 20 V, di/dt = 100 A/µs, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "TC = 25°C; current limited by package",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 480,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "ISD ≤ 120 A, di/dt ≤ 300 A/µs, VDD = V(BR)DSS, Tj ≤ TJMAX",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "J",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Starting Tj = 25 °C, ID = 60 A, VDD = 30 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-pcb",+ "symbol": "Rthj-pcb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "Mounted on a 1-inch² FR-4 board, 2oz Cu",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 62.5,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +595,4 @@ "visibility": { "public": true }-}+}