component
STN4438
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STN4438
UMW · MOSFETs · SOP-8
STN4438 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 3 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 4 | G | input | GATE terminal of the MOSFET; gate-source voltage is rated ±20 V (VGSS). |
| 5 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 6 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 7 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 8 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 3 | A | 1 | |||
| Continuous Drain Current | ID | 8.2 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 6.6 | A | TA=70°C | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Operation Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 70 | °C/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS=VGS, ID=250µA | 2 | ||
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=48V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | µA | VDS=48V, VGS=0V, TJ=50°C | 2 | ||
| On-State Drain Current | ID(ON) | 40 | A | VDS≥5V, VGS=10V | 2 | ||
| Drain-source On Resistance | RDS(ON) | 32 | mΩ | VGS=10V, ID=8A | 2 | ||
| Drain-source On Resistance | RDS(ON) | 37 | mΩ | VGS=4.5V, ID=6.6A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
STN4438 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stn4438-etched.step/stn4438-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stn4438.step/stn4438.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
544bc7c4dd2e7820, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STN4438
**UMW** · MOSFETs · SOP-8
STN4438 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 3 | S | passive | SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V. |
| 4 | G | input | GATE terminal of the MOSFET; gate-source voltage is rated ±20 V (VGSS). |
| 5 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 6 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 7 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
| 8 | D | passive | DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 3 | A | | 1 |
| Continuous Drain Current | ID | | | 8.2 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 6.6 | A | TA=70°C | 1 |
| Power Dissipation | PD | | | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 2 | W | TA=70°C | 1 |
| Operation Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 70 | °C/W | | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | | V | VDS=VGS, ID=250µA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=48V, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | 5 | µA | VDS=48V, VGS=0V, TJ=50°C | 2 |
| On-State Drain Current | ID(ON) | 40 | | | A | VDS≥5V, VGS=10V | 2 |
| Drain-source On Resistance | RDS(ON) | | | 32 | mΩ | VGS=10V, ID=8A | 2 |
| Drain-source On Resistance | RDS(ON) | | | 37 | mΩ | VGS=4.5V, ID=6.6A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=1A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `STN4438`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `stn4438-etched.step` / `stn4438-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stn4438.step` / `stn4438.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755886561496457216) (7 pp, sha256 `544bc7c4dd2e7820`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stn4438-datasheet.pdf)