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STN4438

Public Made by Adom

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STN4438

UMW · MOSFETs · SOP-8

STN4438 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V.
2 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V.
3 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are the common source); device VDSS is rated 60 V.
4 G input GATE terminal of the MOSFET; gate-source voltage is rated ±20 V (VGSS).
5 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS).
6 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS).
7 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS).
8 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are the common drain); drain-source voltage is rated 60 V (VDSS).

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TA=25°C 1
Gate-Source Voltage VGSS -20 20 V 1
Pulsed Drain Current IDM 40 A 1
Continuous Source Current (Diode Conduction) IS 3 A 1
Continuous Drain Current ID 8.2 A TA=25°C 1
Continuous Drain Current ID 6.6 A TA=70°C 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Operation Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance-Junction to Ambient RθJA 70 °C/W 1
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=250µA 2
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250µA 2
Gate-source leakage IGSS -100 100 nA VGS=±20V, VDS=0V 2
Zero gate voltage drain current IDSS 1 µA VDS=48V, VGS=0V 2
Zero gate voltage drain current IDSS 5 µA VDS=48V, VGS=0V, TJ=50°C 2
On-State Drain Current ID(ON) 40 A VDS≥5V, VGS=10V 2
Drain-source On Resistance RDS(ON) 32 mΩ VGS=10V, ID=8A 2
Drain-source On Resistance RDS(ON) 37 mΩ VGS=4.5V, ID=6.6A 2
Diode Forward Voltage VSD 1.2 V IS=1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: STN4438
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stn4438-etched.step / stn4438-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stn4438.step / stn4438.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (7 pp, sha256 544bc7c4dd2e7820, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF