component
STK003SF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STK003SF-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
STK003SF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the source-drain body diode is rated at 1.4 A continuous at TC = 25 °C. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V and the continuous drain current is 6.5 A at TC = 25 °C (package limited). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC = 25 °C) | ID | 6.5 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current (TC = 70 °C) | ID | 6 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous Drain Current (TA = 25 °C) | ID | 5.3 | A | TJ = 150 °C; TA = 25 °C | 1 | ||
| Continuous Drain Current (TA = 70 °C) | ID | 5 | A | TJ = 150 °C; TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Continuous Source-Drain Diode Current (TC = 25 °C) | IS | 1.4 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current (TA = 25 °C) | IS | 0.9 | A | TA = 25 °C (footnotes b, c) | 1 | ||
| Maximum Power Dissipation (TC = 25 °C) | PD | 1.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (TC = 70 °C) | PD | 1.1 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (TA = 25 °C) | PD | 1.1 | W | TA = 25 °C (footnotes b, c) | 1 | ||
| Maximum Power Dissipation (TA = 70 °C) | PD | 0.7 | W | TA = 70 °C (footnotes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | Peak temperature (footnotes d, e) | 1 | |||
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 90 | 115 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient (steady state, note d) | RthJA | 130 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 60 | 75 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
STK003SF-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
stk003sf-vb-etched.step/stk003sf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stk003sf-vb.step/stk003sf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
4ae9232bb4dd1bb7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STK003SF-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
STK003SF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the source-drain body diode is rated at 1.4 A continuous at TC = 25 °C. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V and the continuous drain current is 6.5 A at TC = 25 °C (package limited). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TC = 25 °C) | ID | | | 6.5 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current (TC = 70 °C) | ID | | | 6 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous Drain Current (TA = 25 °C) | ID | | | 5.3 | A | TJ = 150 °C; TA = 25 °C | 1 |
| Continuous Drain Current (TA = 70 °C) | ID | | | 5 | A | TJ = 150 °C; TA = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | 25 | A | | 1 |
| Continuous Source-Drain Diode Current (TC = 25 °C) | IS | | | 1.4 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current (TA = 25 °C) | IS | | | 0.9 | A | TA = 25 °C (footnotes b, c) | 1 |
| Maximum Power Dissipation (TC = 25 °C) | PD | | | 1.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (TC = 70 °C) | PD | | | 1.1 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation (TA = 25 °C) | PD | | | 1.1 | W | TA = 25 °C (footnotes b, c) | 1 |
| Maximum Power Dissipation (TA = 70 °C) | PD | | | 0.7 | W | TA = 70 °C (footnotes b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 260 | °C | Peak temperature (footnotes d, e) | 1 |
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | | 90 | 115 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient (steady state, note d) | RthJA | | | 130 | °C/W | Steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 60 | 75 | °C/W | Steady state | 1 |
## CAD (KiCad official)
- Symbol: `STK003SF-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `stk003sf-vb-etched.step` / `stk003sf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stk003sf-vb.step` / `stk003sf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609149182376890368) (9 pp, sha256 `4ae9232bb4dd1bb7`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stk003sf-vb-datasheet.pdf)