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Contents

README

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STK003SF-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

STK003SF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V.
2 S passive Source terminal of the N-channel MOSFET; the source-drain body diode is rated at 1.4 A continuous at TC = 25 °C.
3 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V and the continuous drain current is 6.5 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TC = 25 °C) ID 6.5 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current (TC = 70 °C) ID 6 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current (TA = 25 °C) ID 5.3 A TJ = 150 °C; TA = 25 °C 1
Continuous Drain Current (TA = 70 °C) ID 5 A TJ = 150 °C; TA = 70 °C 1
Pulsed Drain Current IDM 25 A 1
Continuous Source-Drain Diode Current (TC = 25 °C) IS 1.4 A TC = 25 °C 1
Continuous Source-Drain Diode Current (TA = 25 °C) IS 0.9 A TA = 25 °C (footnotes b, c) 1
Maximum Power Dissipation (TC = 25 °C) PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation (TC = 70 °C) PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation (TA = 25 °C) PD 1.1 W TA = 25 °C (footnotes b, c) 1
Maximum Power Dissipation (TA = 70 °C) PD 0.7 W TA = 70 °C (footnotes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature (footnotes d, e) 1
Gate Resistance Rg 0.8 4.4 8.8 Ω f = 1 MHz 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Maximum Junction-to-Ambient (t ≤ 5 s) RthJA 90 115 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient (steady state, note d) RthJA 130 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: STK003SF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: stk003sf-vb-etched.step / stk003sf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stk003sf-vb.step / stk003sf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 4ae9232bb4dd1bb7, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF