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STGWA20H65DFB2
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STMicroelectronics IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STGWA20H65DFB2
STMicroelectronics · IGBT Transistors / Modules · TO-247-3
STGWA20H65DFB2 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; the datasheet limits gate-emitter voltage to ±20 V continuous and ±30 V transient (tp ≤ 10 µs). |
| 2 | C | passive | Collector of the IGBT, also internally connected to the metal tab; the device is rated for a collector-emitter voltage VCES of 650 V (VGE = 0 V). |
| 3 | E | passive | Emitter of the IGBT and reference terminal for the gate drive; the datasheet specifies VGE = 15 V for the rated VCE(sat) and switching tests. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STGWA20H65DFB2 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
stgwa20h65dfb2-etched.step/stgwa20h65dfb2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgwa20h65dfb2.step/stgwa20h65dfb2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
d63f5462b14a5baf, retrieved 2026-10-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STGWA20H65DFB2
**STMicroelectronics** · IGBT Transistors / Modules · TO-247-3
STGWA20H65DFB2 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; the datasheet limits gate-emitter voltage to ±20 V continuous and ±30 V transient (tp ≤ 10 µs). |
| 2 | C | passive | Collector of the IGBT, also internally connected to the metal tab; the device is rated for a collector-emitter voltage VCES of 650 V (VGE = 0 V). |
| 3 | E | passive | Emitter of the IGBT and reference terminal for the gate drive; the datasheet specifies VGE = 15 V for the rated VCE(sat) and switching tests. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STGWA20H65DFB2`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `stgwa20h65dfb2-etched.step` / `stgwa20h65dfb2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgwa20h65dfb2.step` / `stgwa20h65dfb2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078661881155584) (15 pp, sha256 `d63f5462b14a5baf`, retrieved 2026-10-08, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stgwa20h65dfb2-datasheet.pdf)