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STGWA20H65DFB2

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STMicroelectronics IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGWA20H65DFB2

STMicroelectronics · IGBT Transistors / Modules · TO-247-3

STGWA20H65DFB2 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT; the datasheet limits gate-emitter voltage to ±20 V continuous and ±30 V transient (tp ≤ 10 µs).
2 C passive Collector of the IGBT, also internally connected to the metal tab; the device is rated for a collector-emitter voltage VCES of 650 V (VGE = 0 V).
3 E passive Emitter of the IGBT and reference terminal for the gate drive; the datasheet specifies VGE = 15 V for the rated VCE(sat) and switching tests.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGWA20H65DFB2
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: stgwa20h65dfb2-etched.step / stgwa20h65dfb2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgwa20h65dfb2.step / stgwa20h65dfb2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 d63f5462b14a5baf, retrieved 2026-10-08, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF