# STGP10NC60KD

**STMicroelectronics** · IGBT Transistors / Modules · TO-220-3

STGP10NC60KD from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; gate-emitter voltage VGE is rated at ±20 V (absolute maximum). |
| 2 | C | passive | Collector of the IGBT, also connected to the metal tab; continuous collector current is 20 A at TC = 25 °C with VCES = 600 V. |
| 3 | E | passive | Emitter of the IGBT; gate-emitter voltage is referenced to this pin, and the collector-emitter breakdown voltage V(BR)CES is 600 V minimum at VGE = 0 V and IC = 1 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STGP10NC60KD`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `stgp10nc60kd-etched.step` / `stgp10nc60kd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgp10nc60kd.step` / `stgp10nc60kd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgp10nc60kd.pdf) (28 pp, sha256 `c2ddb838464c938a`, retrieved 2026-10-08, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stgp10nc60kd-datasheet.pdf)