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STGP10NC60KD

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGP10NC60KD

STMicroelectronics · IGBT Transistors / Modules · TO-220-3

STGP10NC60KD from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT; gate-emitter voltage VGE is rated at ±20 V (absolute maximum).
2 C passive Collector of the IGBT, also connected to the metal tab; continuous collector current is 20 A at TC = 25 °C with VCES = 600 V.
3 E passive Emitter of the IGBT; gate-emitter voltage is referenced to this pin, and the collector-emitter breakdown voltage V(BR)CES is 600 V minimum at VGE = 0 V and IC = 1 mA.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGP10NC60KD
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: stgp10nc60kd-etched.step / stgp10nc60kd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp10nc60kd.step / stgp10nc60kd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (28 pp, sha256 c2ddb838464c938a, retrieved 2026-10-08, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF