component

STGP10H60DF

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstgp10h60dffactory-2.0.0extractor-text

Verified STGP10H60DF

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STGP10H60DF · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 23-page datasheet
  • ✓distributor: lcsc C5268547, digikey 497-14277-5-ND, mouser 511-STGP10H60DF
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-j8yin0uj/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stgp10h60df.kicad_sym✓ stgp10h60df.kicad_mod✓ stgp10h60df.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers stgp10h60df: viewers · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
stgp10h60df-etched.glb Publish 0.1.0 · Ray 8d ago
stgp10h60df-etched.step stgp10h60df: factory component page (tier=mfr) · Ray 8d ago
stgp10h60df-hero.glb stgp10h60df: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
stgp10h60df-hero.overlay.json Publish 0.1.0 · Ray 8d ago
stgp10h60df.glb Publish 0.1.0 · Ray 8d ago
stgp10h60df.kicad_mod Publish 0.1.0 · Ray 8d ago
stgp10h60df.kicad_sym Publish 0.1.0 · Ray 8d ago
stgp10h60df.lbr Publish 0.1.0 · Ray 8d ago
stgp10h60df.step Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 8d ago

STGP10H60DF

STMicroelectronics · IGBT Transistors / Modules · TO-220

STGP10H60DF from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-emitter voltage is rated ±20 V continuous and ±30 V transient.
2 C passive Collector terminal (also connected to the TAB); the collector-emitter voltage is rated 600 V with 20 A continuous collector current at TC = 25 °C.
3 E passive Emitter terminal; the IGBT collector-emitter breakdown voltage is 600 V minimum at VGE = 0 V and IC = 2 mA.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCES 600 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 20 A TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 10 A TC = 100 °C 2
Pulsed collector current ICP 40 A 2
Gate-emitter voltage VGE -20 20 V 2
Transient gate-emitter voltage VGE -30 30 V 2
Continuous forward current at TC = 25 °C IF 20 A TC = 25 °C 2
Continuous forward current at TC = 100 °C IF 10 A TC = 100 °C 2
Pulsed forward current IFP 40 A 2
Insulation withstand voltage (RMS) VISO 2.5 kV from all three leads to external heat sink (t = 1 s; Tc = 25 °C) 2
Total power dissipation at TC = 25 °C PTOT 115 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Thermal resistance, junction-to-case IGBT RthJC 1.3 °C/W 2
Thermal resistance, junction-to-case diode RthJC 2.78 °C/W 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W 2
Collector-emitter breakdown voltage V(BR)CES 600 V VGE = 0 V, IC = 2 mA 3
Collector-emitter saturation voltage VCE(sat) 1.5 1.95 V VGE = 15 V, IC = 10 A 3
Collector-emitter saturation voltage VCE(sat) 1.65 V VGE = 15 V, IC = 10 A, TJ = 125 °C 3
Collector-emitter saturation voltage VCE(sat) 1.7 V VGE = 15 V, IC = 10 A, TJ = 175 °C 3
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 250 μA 3
Collector cut-off current ICES 25 μA VCE = 600 V, VGE = 0 V 3
Gate-emitter leakage current IGES -250 250 nA VGE = ±20 V, VCE = 0 V 3
Short-circuit withstand time tsc 3 5 μs VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω 4
Forward on-voltage VF 1.7 2.2 V IF = 10 A 5
Forward on-voltage at TJ = 175 °C VF 1.3 V IF = 10 A, TJ = 175 °C 5

CAD (KiCad official)

  • Symbol: STGP10H60DF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stgp10h60df-etched.step / stgp10h60df-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp10h60df.step / stgp10h60df.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (23 pp, sha256 dc154a9a40976d33, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF