STGP10H60DF from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; the gate-emitter voltage is rated ±20 V continuous and ±30 V transient.
2	C	passive	Collector terminal (also connected to the TAB); the collector-emitter voltage is rated 600 V with 20 A continuous collector current at TC = 25 °C.
3	E	passive	Emitter terminal; the IGBT collector-emitter breakdown voltage is 600 V minimum at VGE = 0 V and IC = 2 mA.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-emitter voltage	VCES			600	V	VGE = 0 V	2
Continuous collector current at TC = 25 °C	IC			20	A	TC = 25 °C	2
Continuous collector current at TC = 100 °C	IC			10	A	TC = 100 °C	2
Pulsed collector current	ICP			40	A		2
Gate-emitter voltage	VGE	-20		20	V		2
Transient gate-emitter voltage	VGE	-30		30	V		2
Continuous forward current at TC = 25 °C	IF			20	A	TC = 25 °C	2
Continuous forward current at TC = 100 °C	IF			10	A	TC = 100 °C	2
Pulsed forward current	IFP			40	A		2
Insulation withstand voltage (RMS)	VISO			2.5	kV	from all three leads to external heat sink (t = 1 s; Tc = 25 °C)	2
Total power dissipation at TC = 25 °C	PTOT			115	W	TC = 25 °C	2
Storage temperature range	TSTG	-55		150	°C		2
Operating junction temperature range	TJ	-55		175	°C		2
Thermal resistance, junction-to-case IGBT	RthJC			1.3	°C/W		2
Thermal resistance, junction-to-case diode	RthJC			2.78	°C/W		2
Thermal resistance, junction-to-ambient	RthJA			62.5	°C/W		2
Collector-emitter breakdown voltage	V(BR)CES	600			V	VGE = 0 V, IC = 2 mA	3
Collector-emitter saturation voltage	VCE(sat)		1.5	1.95	V	VGE = 15 V, IC = 10 A	3
Collector-emitter saturation voltage	VCE(sat)			1.65	V	VGE = 15 V, IC = 10 A, TJ = 125 °C	3
Collector-emitter saturation voltage	VCE(sat)			1.7	V	VGE = 15 V, IC = 10 A, TJ = 175 °C	3
Gate threshold voltage	VGE(th)	5	6	7	V	VCE = VGE, IC = 250 μA	3
Collector cut-off current	ICES			25	μA	VCE = 600 V, VGE = 0 V	3
Gate-emitter leakage current	IGES	-250		250	nA	VGE = ±20 V, VCE = 0 V	3
Short-circuit withstand time	tsc	3	5		μs	VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω	4
Forward on-voltage	VF		1.7	2.2	V	IF = 10 A	5
Forward on-voltage at TJ = 175 °C	VF			1.3	V	IF = 10 A, TJ = 175 °C	5

CAD (KiCad official)

Symbol: STGP10H60DF
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: stgp10h60df-etched.step / stgp10h60df-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp10h60df.step / stgp10h60df.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (23 pp, sha256 dc154a9a40976d33, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

STGP10H60DF

Verified STGP10H60DF

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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