component
STGD4M65DF2
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STGD4M65DF2
STMicroelectronics · IGBT Transistors / Modules · DPAK
STGD4M65DF2 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input; threshold VGE(th) = 5-7 V (VCE = VGE, IC = 250 µA); maximum gate-emitter voltage ±20 V. |
| 2 | C | passive | Collector terminal, electrically connected to the exposed TAB; rated VCES = 650 V (VGE = 0 V), IC = 8 A at TC = 25 °C / 4 A at TC = 100 °C, VCE(sat) = 1.6 V typ. at IC = 4 A, VGE = 15 V. |
| 3 | E | passive | Emitter terminal (IGBT emitter and antiparallel diode anode); reference node for gate drive and collector current return. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STGD4M65DF2 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
stgd4m65df2-etched.step/stgd4m65df2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgd4m65df2.step/stgd4m65df2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (20 pp, sha256
901a6b7c4f95b744, retrieved 2026-09-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-sonnet-4-6(text+vision), consensusclaude-opus-4-7(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STGD4M65DF2
**STMicroelectronics** · IGBT Transistors / Modules · DPAK
STGD4M65DF2 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input; threshold VGE(th) = 5-7 V (VCE = VGE, IC = 250 µA); maximum gate-emitter voltage ±20 V. |
| 2 | C | passive | Collector terminal, electrically connected to the exposed TAB; rated VCES = 650 V (VGE = 0 V), IC = 8 A at TC = 25 °C / 4 A at TC = 100 °C, VCE(sat) = 1.6 V typ. at IC = 4 A, VGE = 15 V. |
| 3 | E | passive | Emitter terminal (IGBT emitter and antiparallel diode anode); reference node for gate drive and collector current return. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STGD4M65DF2`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `stgd4m65df2-etched.step` / `stgd4m65df2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgd4m65df2.step` / `stgd4m65df2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgd4m65df2.pdf) (20 pp, sha256 `901a6b7c4f95b744`, retrieved 2026-09-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-sonnet-4-6` (text+vision), consensus `claude-opus-4-7` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stgd4m65df2-datasheet.pdf)