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Contents

README

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STGD4M65DF2

STMicroelectronics · IGBT Transistors / Modules · DPAK

STGD4M65DF2 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; threshold VGE(th) = 5-7 V (VCE = VGE, IC = 250 µA); maximum gate-emitter voltage ±20 V.
2 C passive Collector terminal, electrically connected to the exposed TAB; rated VCES = 650 V (VGE = 0 V), IC = 8 A at TC = 25 °C / 4 A at TC = 100 °C, VCE(sat) = 1.6 V typ. at IC = 4 A, VGE = 15 V.
3 E passive Emitter terminal (IGBT emitter and antiparallel diode anode); reference node for gate drive and collector current return.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGD4M65DF2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: stgd4m65df2-etched.step / stgd4m65df2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgd4m65df2.step / stgd4m65df2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (20 pp, sha256 901a6b7c4f95b744, retrieved 2026-09-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (text+vision), consensus claude-opus-4-7 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF