component
STGAP2SICSNTR
Public Made by Adomby adom
STMicroelectronics Isolators - Gate Drivers, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
STGAP2SICSNTR
STMicroelectronics · Isolators - Gate Drivers · SO-8
STGAP2SICSNTR from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Driver logic supply voltage, recommended 3.1 V to 5.5 V vs. GND (absolute maximum 6.5 V), with a 100 nF plus 1 µF to 10 µF bypass placed close to the pin. |
| 2 | IN+ | input | Driver logic input, active high, with hysteresis thresholds of 0.33·VDD (typ) low and 0.66·VDD (typ) high, 100 kΩ pull-down, and a 20 to 40 ns deglitch filter. |
| 3 | IN- | input | Driver logic input, active low, with the same threshold, pull-down and deglitch characteristics as IN+; logic pins are rated 0 to 5.5 V vs. GND. |
| 4 | GND | power_in | Driver logic ground, the reference for VDD and the logic inputs IN+ and IN-. |
| 5 | VH | power_in | Gate driving positive supply referenced to GNDISO, with recommended maximum 26 V, absolute maximum 28 V, and UVLO turn-on threshold of 14.6 to 16.4 V. |
| 6 | GON | output | Source output (separated-output option, GON-GOFF part) that delivers up to 4 A source current at 25 °C and drives high to VH-0.125 V (typ) at 100 mA. |
| 7 | GOFF | output | Sink output (separated-output option, GON-GOFF part) that sinks up to 4 A at 25 °C and drives low to 120 mV (typ) at 100 mA, with a SafeClp active clamp of 2.3 V (typ). |
| 8 | GNDISO | power_in | Isolated ground for the gate driving section, the reference for VH and the GON/GOFF outputs. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
STGAP2SICSNTR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
stgap2sicsntr-etched.step/stgap2sicsntr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgap2sicsntr.step/stgap2sicsntr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (24 pp, sha256
3cdd11d41062afa9, retrieved 2026-10-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STGAP2SICSNTR
**STMicroelectronics** · Isolators - Gate Drivers · SO-8
STGAP2SICSNTR from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Driver logic supply voltage, recommended 3.1 V to 5.5 V vs. GND (absolute maximum 6.5 V), with a 100 nF plus 1 µF to 10 µF bypass placed close to the pin. |
| 2 | IN+ | input | Driver logic input, active high, with hysteresis thresholds of 0.33·VDD (typ) low and 0.66·VDD (typ) high, 100 kΩ pull-down, and a 20 to 40 ns deglitch filter. |
| 3 | IN- | input | Driver logic input, active low, with the same threshold, pull-down and deglitch characteristics as IN+; logic pins are rated 0 to 5.5 V vs. GND. |
| 4 | GND | power_in | Driver logic ground, the reference for VDD and the logic inputs IN+ and IN-. |
| 5 | VH | power_in | Gate driving positive supply referenced to GNDISO, with recommended maximum 26 V, absolute maximum 28 V, and UVLO turn-on threshold of 14.6 to 16.4 V. |
| 6 | GON | output | Source output (separated-output option, GON-GOFF part) that delivers up to 4 A source current at 25 °C and drives high to VH-0.125 V (typ) at 100 mA. |
| 7 | GOFF | output | Sink output (separated-output option, GON-GOFF part) that sinks up to 4 A at 25 °C and drives low to 120 mV (typ) at 100 mA, with a SafeClp active clamp of 2.3 V (typ). |
| 8 | GNDISO | power_in | Isolated ground for the gate driving section, the reference for VH and the GON/GOFF outputs. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `STGAP2SICSNTR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `stgap2sicsntr-etched.step` / `stgap2sicsntr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgap2sicsntr.step` / `stgap2sicsntr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078722488578048) (24 pp, sha256 `3cdd11d41062afa9`, retrieved 2026-10-08, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stgap2sicsntr-datasheet.pdf)